62mm C Series IGBT module Infineon FF200R17KE4 with fast Trench Fieldstop IGBT4 and Emitter Controlled diode
Key Attributes
Model Number:
FF200R17KE4
Product Custom Attributes
Pd - Power Dissipation:
1.25kW
Td(off):
700ns
Td(on):
240ns
Collector-Emitter Breakdown Voltage (Vces):
1.7kV
Input Capacitance(Cies):
18nF
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@8.00mA
Gate Charge(Qg):
-
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
600A
Reverse Recovery Time(trr):
-
Switching Energy(Eoff):
35mJ
Turn-On Energy (Eon):
53mJ
Mfr. Part #:
FF200R17KE4
Package:
Screw Terminals
Product Description
Product Overview
The FF200R17KE4 is a 62mm C-Series IGBT module featuring a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode. It offers extended operation temperature, low VCEsat with a positive temperature coefficient, and high robustness. This module is designed for high-power applications such as inverters, motor drives, UPS systems, and wind turbines.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: CTI > 400, 4 kV AC 1min Insulation
Technical Specifications
| Parameter | Value | Unit | Notes |
| IGBT, Inverter | |||
| Collector-emitter voltage (VCES) | 1700 | V | Tvj = 25C |
| Continuous DC collector current (IC nom) | 200 | A | TC = 100C, Tvj max = 175C |
| Continuous DC collector current (IC) | 310 | A | TC = 25C, Tvj max = 175C |
| Repetitive peak collector current (ICRM) | 400 | A | tP = 1 ms |
| Total power dissipation (Ptot) | 1250 | W | TC = 25C, Tvj max = 175C |
| Gate-emitter peak voltage (VGES) | +/-20 | V | |
| Collector-emitter saturation voltage (VCE sat) | 1.95 - 2.45 | V | IC = 200 A, VGE = 15 V, Tvj = 25C - 150C |
| Gate threshold voltage (VGEth) | 5.2 - 6.4 | V | IC = 8.00 mA, VCE = VGE, Tvj = 25C |
| Gate charge (QG) | 2.30 | C | VGE = -15 V ... +15 V |
| Internal gate resistor (RGint) | 3.8 | Tvj = 25C | |
| Input capacitance (Cies) | 18.0 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance (Cres) | 0.58 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current (ICES) | 1.0 | mA | VCE = 1700 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current (IGES) | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time (td on) | 0.24 - 0.30 | s | IC = 200 A, VCE = 900 V, VGE = 15 V, RGon = 3.6 , Tvj = 25C - 150C |
| Rise time (tr) | 0.05 - 0.055 | s | IC = 200 A, VCE = 900 V, VGE = 15 V, RGon = 3.6 , Tvj = 25C - 150C |
| Turn-off delay time (td off) | 0.70 - 0.78 | s | IC = 200 A, VCE = 900 V, VGE = 15 V, RGoff = 3.6 , Tvj = 25C - 150C |
| Fall time (tf) | 0.08 - 0.15 | s | IC = 200 A, VCE = 900 V, VGE = 15 V, RGoff = 3.6 , Tvj = 25C - 150C |
| Turn-on energy loss per pulse (Eon) | 53.0 - 77.0 | mJ | IC = 200 A, VCE = 900 V, LS = 60 nH, VGE = 15 V, di/dt = 3200 A/s, RGon = 3.6 , Tvj = 25C - 150C |
| Turn-off energy loss per pulse (Eoff) | 35.0 - 64.0 | mJ | IC = 200 A, VCE = 900 V, LS = 60 nH, VGE = 15 V, du/dt = 3600 V/s, RGoff = 3.6 , Tvj = 25C - 150C |
| Short circuit data (ISC) | 900 | A | VGE 15 V, VCC = 1000 V, VCEmax = VCES - LsCE di/dt, Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case (RthJC) | 0.12 | K/W | per IGBT |
| Thermal resistance, case to heatsink (RthCH) | 0.035 | K/W | per IGBT, Paste = 1 W/(mK) |
| Temperature under switching conditions (Tvj op) | -40 - 150 | C | |
| Diode, Inverter | |||
| Repetitive peak reverse voltage (VRRM) | 1700 | V | Tvj = 25C |
| Continuous DC forward current (IF) | 200 | A | |
| Repetitive peak forward current (IFRM) | 600 | A | tP = 1 ms |
| It value | 9500 - 10000 | As | VR = 0 V, tP = 10 ms, Tvj = 125C - 150C |
| Forward voltage (VF) | 1.80 - 2.20 | V | IF = 200 A, Tvj = 25C - 150C |
| Peak reverse recovery current (IRM) | 200 - 260 | A | IF = 200 A, - diF/dt = 3200 A/s, VR = 900 V, VGE = -15 V, Tvj = 25C - 150C |
| Recovered charge (Qr) | 50.0 - 90.0 | C | IF = 200 A, - diF/dt = 3200 A/s, VR = 900 V, VGE = -15 V, Tvj = 25C - 150C |
| Reverse recovery energy (Erec) | 23.0 - 50.0 | mJ | IF = 200 A, - diF/dt = 3200 A/s, VR = 900 V, VGE = -15 V, Tvj = 25C - 150C |
| Thermal resistance, junction to case (RthJC) | 0.16 | K/W | per diode |
| Thermal resistance, case to heatsink (RthCH) | 0.047 | K/W | per diode, Paste = 1 W/(mK) |
| Temperature under switching conditions (Tvj op) | -40 - 150 | C | |
| Module | |||
| Isolation test voltage (VISOL) | 4.0 | kV | RMS, f = 50 Hz, t = 1 min. |
| Material of module baseplate | Cu | ||
| Internal isolation | Al2O3 | basic insulation (class 1, IEC 61140) | |
| Creepage distance (terminal to heatsink) | 29.0 | mm | |
| Creepage distance (terminal to terminal) | 23.0 | mm | |
| Clearance (terminal to heatsink) | 23.0 | mm | |
| Clearance (terminal to terminal) | 11.0 | mm | |
| Comperative tracking index (CTI) | > 400 | ||
| Thermal resistance, case to heatsink (RthCH) | 0.01 | K/W | per module, Paste = 1 W/(mK) |
| Stray inductance module (LsCE) | 20 | nH | |
| Module lead resistance (RCC'+EE') | 0.70 | m | TC = 25C, per switch |
| Storage temperature (Tstg) | -40 - 125 | C | |
| Mounting torque for module mounting (Screw M6) | 3.00 - 6.00 | Nm | Mounting according to valid application note |
| Terminal connection torque (Screw M6) | 2.5 - 5.0 | Nm | Mounting according to valid application note |
| Weight (G) | 340 | g | |
2007152145_Infineon-FF200R17KE4_C541005.pdf
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