Silicon NPN Power Transistor ISC 2SC4793 Designed for Power Amplifier and Driver Stage Applications
Product Overview
The 2SC4793 is a Silicon NPN Power Transistor from ISC, featuring a high Collector-Emitter Breakdown Voltage of 230V (Min) and a high Current-Gain Bandwidth Product. It is designed as a complement to the 2SA1837 and offers minimum lot-to-lot variations for robust device performance. This transistor is suitable for power amplifier and driver stage amplifier applications.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Material: Silicon
- Type: NPN Power Transistor
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ. | Max | Unit |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= 10mA ; IB= 0 | 230 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC= 500mA; IB= 50mA | 1.5 | V | ||
| Base-Emitter On Voltage | VBE(on) | IC= 500mA ; VCE= 5V | 1.0 | V | ||
| Collector Cutoff Current | ICBO | VCB= 230V ; IE=0 | 1.0 | A | ||
| Emitter Cutoff Current | IEBO | VEB= 5V; IC=0 | 1.0 | A | ||
| DC Current Gain | hFE | IC= 100mA; VCE= 5V | 100 | 320 | ||
| Output Capacitance | COB | IE= 0; VCB= 10V; f= 1MHz | 20 | pF | ||
| Current-GainBandwidth Product | fT | IC= 100mA ; VCE= 10V | 100 | MHz | ||
| Collector-Base Voltage | VCBO | 230 | V | |||
| Collector-Emitter Voltage | VCEO | 230 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-Continuous | IC | 1 | A | |||
| Base Current-Continuous | IB | 0.1 | A | |||
| Collector Power Dissipation @Ta=25 | PC | @Ta=25 | 2 | W | ||
| Collector Power Dissipation @TC=25 | PC | @TC=25 | 20 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 |
2411200017_ISC-2SC4793_C491416.pdf
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