Silicon NPN Power Transistor ISC 2SC4793 Designed for Power Amplifier and Driver Stage Applications

Key Attributes
Model Number: 2SC4793
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
20W
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
230V
Mfr. Part #:
2SC4793
Package:
TO-220F
Product Description

Product Overview

The 2SC4793 is a Silicon NPN Power Transistor from ISC, featuring a high Collector-Emitter Breakdown Voltage of 230V (Min) and a high Current-Gain Bandwidth Product. It is designed as a complement to the 2SA1837 and offers minimum lot-to-lot variations for robust device performance. This transistor is suitable for power amplifier and driver stage amplifier applications.

Product Attributes

  • Brand: ISC
  • Trademark: ISC & ISCsemi
  • Material: Silicon
  • Type: NPN Power Transistor

Technical Specifications

ParameterSymbolConditionsMinTyp.MaxUnit
Collector-Emitter Breakdown VoltageV(BR)CEOIC= 10mA ; IB= 0230V
Collector-Emitter Saturation VoltageVCE(sat)IC= 500mA; IB= 50mA1.5V
Base-Emitter On VoltageVBE(on)IC= 500mA ; VCE= 5V1.0V
Collector Cutoff CurrentICBOVCB= 230V ; IE=01.0A
Emitter Cutoff CurrentIEBOVEB= 5V; IC=01.0A
DC Current GainhFEIC= 100mA; VCE= 5V100320
Output CapacitanceCOBIE= 0; VCB= 10V; f= 1MHz20pF
Current-GainBandwidth ProductfTIC= 100mA ; VCE= 10V100MHz
Collector-Base VoltageVCBO230V
Collector-Emitter VoltageVCEO230V
Emitter-Base VoltageVEBO5V
Collector Current-ContinuousIC1A
Base Current-ContinuousIB0.1A
Collector Power Dissipation @Ta=25PC@Ta=252W
Collector Power Dissipation @TC=25PC@TC=2520W
Junction TemperatureTJ150
Storage TemperatureTstg-55150

2411200017_ISC-2SC4793_C491416.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.