Power module Infineon FF500R17KE4 designed for high current and voltage applications in motor drives

Key Attributes
Model Number: FF500R17KE4
Product Custom Attributes
Collector-Emitter Breakdown Voltage (Vces):
1.7kV
Input Capacitance(Cies):
45nF@25V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.3V@15V,500A
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
FF500R17KE4
Product Description

Product Overview

The FF500R17KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodes. It offers enhanced operating temperature, low VCEsat, and exceptional robustness. Ideal for high-power converters, motor drives, UPS systems, and wind turbines.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Cu (baseplate), Al2O3 (internal isolation)
  • Color: Not specified
  • Certifications: CE, UL (E83335)

Technical Specifications

ParameterValueUnitConditions
IGBT, Inverter
Collector-emitter voltage1700VTvj = 25C
Continuous DC collector current500ATC = 100C, Tvj max = 175C
Repetitive peak collector current1000AtP = 1 ms
Gate-emitter peak voltage+/-20V
Collector-emitter saturation voltage1.95 - 2.45VIC = 500 A, VGE = 15 V
Gate threshold voltage5.20 - 6.40VIC = 20.0 mA, VCE = VGE, Tvj = 25C
Gate charge5.75CVGE = -15 V ... +15 V
Internal gate resistor1.3Tvj = 25C
Input capacitance45.0nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance1.45nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current1.0mAVCE = 1700 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current400nAVCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time0.22 - 0.26sIC = 500 A, VCE = 900 V, VGE = 15 V, RGon = 1.0
Rise time0.04 - 0.05sIC = 500 A, VCE = 900 V, VGE = 15 V, RGon = 1.0
Turn-off delay time0.53 - 0.71sIC = 500 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0
Fall time0.10 - 0.18sIC = 500 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0
Turn-on energy loss per pulse91.5 - 140mJIC = 500 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, di/dt = 10000 A/s
Turn-off energy loss per pulse94.0 - 170mJIC = 500 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, du/dt = 3000 V/s
Short circuit data2000AVGE 15 V, VCC = 1000 V, VCEmax = VCES -LsCE di/dt, Tvj = 150C, tP 10 s
Thermal resistance, junction to case0.0485K/Wper IGBT
Thermal resistance, case to heatsink0.0241K/Wper IGBT
Operating temperature-40 - 150C
Diode, Inverter
Repetitive peak reverse voltage1700VTvj = 25C
Continuous DC forward current500A
Repetitive peak forward current1000AtP = 1 ms
It value31500 - 33000AsVR = 0 V, tP = 10 ms
Forward voltage1.95 - 2.60VIF = 500 A, VGE = 0 V
Peak reverse recovery current770 - 825AIF = 500 A, - diF/dt = 10000 A/s, VR = 900 V, VGE = -15 V
Recovered charge120 - 215CIF = 500 A, - diF/dt = 10000 A/s, VR = 900 V, VGE = -15 V
Reverse recovery energy69.0 - 135mJIF = 500 A, - diF/dt = 10000 A/s, VR = 900 V, VGE = -15 V
Thermal resistance, junction to case0.104K/Wper diode
Thermal resistance, case to heatsink0.0354K/Wper diode
Operating temperature-40 - 150C
Module
Isolation test voltage4.0kVRMS, f = 50 Hz, t = 1 min.
Creepage distance29.0 - 23.0mmTerminal to heatsink / terminal to terminal
Clearance23.0 - 11.0mmTerminal to heatsink / terminal to terminal
Comparative tracking index> 400
Stray inductance module20nHLsCE
Module lead resistance, terminals - chip0.46mTC = 25C, per switch
Storage temperature-40 - 125C
Mounting torque for module mounting3.00 - 6.00NmScrew M6
Terminal connection torque2.5 - 5.0NmScrew M6
Weight340g

2410311237_Infineon-FF500R17KE4_C3198649.pdf

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