Power module Infineon FF500R17KE4 designed for high current and voltage applications in motor drives
Product Overview
The FF500R17KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodes. It offers enhanced operating temperature, low VCEsat, and exceptional robustness. Ideal for high-power converters, motor drives, UPS systems, and wind turbines.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Cu (baseplate), Al2O3 (internal isolation)
- Color: Not specified
- Certifications: CE, UL (E83335)
Technical Specifications
| Parameter | Value | Unit | Conditions |
| IGBT, Inverter | |||
| Collector-emitter voltage | 1700 | V | Tvj = 25C |
| Continuous DC collector current | 500 | A | TC = 100C, Tvj max = 175C |
| Repetitive peak collector current | 1000 | A | tP = 1 ms |
| Gate-emitter peak voltage | +/-20 | V | |
| Collector-emitter saturation voltage | 1.95 - 2.45 | V | IC = 500 A, VGE = 15 V |
| Gate threshold voltage | 5.20 - 6.40 | V | IC = 20.0 mA, VCE = VGE, Tvj = 25C |
| Gate charge | 5.75 | C | VGE = -15 V ... +15 V |
| Internal gate resistor | 1.3 | Tvj = 25C | |
| Input capacitance | 45.0 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance | 1.45 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current | 1.0 | mA | VCE = 1700 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current | 400 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time | 0.22 - 0.26 | s | IC = 500 A, VCE = 900 V, VGE = 15 V, RGon = 1.0 |
| Rise time | 0.04 - 0.05 | s | IC = 500 A, VCE = 900 V, VGE = 15 V, RGon = 1.0 |
| Turn-off delay time | 0.53 - 0.71 | s | IC = 500 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0 |
| Fall time | 0.10 - 0.18 | s | IC = 500 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0 |
| Turn-on energy loss per pulse | 91.5 - 140 | mJ | IC = 500 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, di/dt = 10000 A/s |
| Turn-off energy loss per pulse | 94.0 - 170 | mJ | IC = 500 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, du/dt = 3000 V/s |
| Short circuit data | 2000 | A | VGE 15 V, VCC = 1000 V, VCEmax = VCES -LsCE di/dt, Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case | 0.0485 | K/W | per IGBT |
| Thermal resistance, case to heatsink | 0.0241 | K/W | per IGBT |
| Operating temperature | -40 - 150 | C | |
| Diode, Inverter | |||
| Repetitive peak reverse voltage | 1700 | V | Tvj = 25C |
| Continuous DC forward current | 500 | A | |
| Repetitive peak forward current | 1000 | A | tP = 1 ms |
| It value | 31500 - 33000 | As | VR = 0 V, tP = 10 ms |
| Forward voltage | 1.95 - 2.60 | V | IF = 500 A, VGE = 0 V |
| Peak reverse recovery current | 770 - 825 | A | IF = 500 A, - diF/dt = 10000 A/s, VR = 900 V, VGE = -15 V |
| Recovered charge | 120 - 215 | C | IF = 500 A, - diF/dt = 10000 A/s, VR = 900 V, VGE = -15 V |
| Reverse recovery energy | 69.0 - 135 | mJ | IF = 500 A, - diF/dt = 10000 A/s, VR = 900 V, VGE = -15 V |
| Thermal resistance, junction to case | 0.104 | K/W | per diode |
| Thermal resistance, case to heatsink | 0.0354 | K/W | per diode |
| Operating temperature | -40 - 150 | C | |
| Module | |||
| Isolation test voltage | 4.0 | kV | RMS, f = 50 Hz, t = 1 min. |
| Creepage distance | 29.0 - 23.0 | mm | Terminal to heatsink / terminal to terminal |
| Clearance | 23.0 - 11.0 | mm | Terminal to heatsink / terminal to terminal |
| Comparative tracking index | > 400 | ||
| Stray inductance module | 20 | nH | LsCE |
| Module lead resistance, terminals - chip | 0.46 | m | TC = 25C, per switch |
| Storage temperature | -40 - 125 | C | |
| Mounting torque for module mounting | 3.00 - 6.00 | Nm | Screw M6 |
| Terminal connection torque | 2.5 - 5.0 | Nm | Screw M6 |
| Weight | 340 | g | |
2410311237_Infineon-FF500R17KE4_C3198649.pdf
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