High speed switching IGBT JIAENSEMI JNG40T65AI designed for soft switching and motor control systems
Key Attributes
Model Number:
JNG40T65AI
Product Custom Attributes
Pd - Power Dissipation:
278W
Td(off):
86ns
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11.8pF
Input Capacitance(Cies):
1.34nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
98pF
Reverse Recovery Time(trr):
148ns
Switching Energy(Eoff):
500uJ
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
JNG40T65AI
Package:
TO-3P
Product Description
Product Overview
The JNG40T65AI Trench IGBT from JIAEN Semiconductor offers advanced performance with 650V voltage rating and 40A continuous collector current. It features low conduction losses, high speed switching capabilities, and soft current turn-off waveforms, contributing to higher system efficiency. Ideal for motor control, general inverters, and soft switching applications.
Product Attributes
- Brand: JIAEN
- Model: JNG40T65AI
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current | IC | (TC=25 ) | 80 | A | ||
| (TC=100) | 40 | A | ||||
| Pulsed Collector Current | ICM | (Note 1) | 120 | A | ||
| Diode Continuous Forward Current | IF | (TC=100 ) | 40 | A | ||
| Diode Maximum Forward Current | IFM | (Note 1) | 120 | A | ||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation | PD | (TC=25 ) | 278 | W | ||
| (TC=100) | 111 | W | ||||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | 100 | uA | |
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | - | 100 | nA | |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 40A | 2.0 | 2.5 | V | |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=40A | 594 | nC | ||
| Gate-Emitter Charge | Qge | 119 | nC | |||
| Gate-Collector Charge | Qgc | 374 | nC | |||
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=40A RG=15 Inductive Load TC=25 | 19 | ns | ||
| Turn-on Rise Time | tr | 65 | ns | |||
| Turn-off Delay Time | td(off) | 86 | ns | |||
| Turn-off Fall Time | tf | 98 | ns | |||
| Turn-on Switching Loss | Eon | 1.3 | mJ | |||
| Turn-off Switching Loss | Eoff | 0.5 | mJ | |||
| Total Switching Loss | Ets | 1.8 | mJ | |||
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | 1340 | pF | ||
| Output Capacitance | Coes | 98 | pF | |||
| Reverse Transfer Capacitance | Cres | 11.8 | pF | |||
| Diode Forward Voltage | VF | IF=40A | 1.5 | 3.0 | V | |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 40A Rg=15 | 148 | ns | ||
| Diode peak Reverse Recovery Current | Irr | 13.8 | A | |||
| Diode Reverse Recovery Charge | Qrr | 1055 | nC | |||
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | 0.45 | / W | |||
| Thermal Resistance, Junction to case (Diode) | Rth j-c | 1.5 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W |
2509021810_JIAENSEMI-JNG40T65AI_C51484280.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
