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quality CoolSiC Trench MOSFET EasyDUAL module Infineon FF55MR12W1M1HB70BPSA1 with integrated NTC sensor and AlN substrate factory
quality CoolSiC Trench MOSFET EasyDUAL module Infineon FF55MR12W1M1HB70BPSA1 with integrated NTC sensor and AlN substrate factory

CoolSiC Trench MOSFET EasyDUAL module Infineon FF55MR12W1M1HB70BPSA1 with integrated NTC sensor and AlN substrate

Key Attributes
Model Number: FF55MR12W1M1HB70BPSA1
Product Custom Attributes
Mfr. Part #:
FF55MR12W1M1HB70BPSA1
Product Description

EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC

The EasyDUAL module, featuring a CoolSiC Trench MOSFET and PressFIT technology with an integrated NTC temperature sensor, is designed for high-frequency switching applications. Its low inductive design and low switching losses contribute to efficient operation. The module offers rugged mounting with integrated clamps and an AlN substrate for low thermal resistance, making it suitable for demanding industrial applications.

Product Attributes

  • Brand: Infineon
  • Technology: CoolSiC Trench MOSFET
  • Mounting: PressFIT
  • Features: Integrated NTC temperature sensor, AlN substrate
  • Certifications: Qualified for industrial applications according to IEC 60747, 60749 and 60068

Technical Specifications

ParameterSymbolNote or test conditionValuesUnit
General Module Characteristics
Stray inductance moduleLsCE14nH
Module lead resistance, terminals - chipRCC'+EE'TH = 25 C, per switch5.3m
Storage temperatureTstg-40 to 125C
Mounting force per clampF20 to 50N
WeightG24g
MOSFET Maximum Rated Values
Drain-source voltageVDSSTvj = 25 C1200V
Continuous DC drain currentIDDCTvj = 175 C, VGS = 18 V, TH = 125 C15A
Repetitive peak drain currentIDRMverified by design, tp limited by Tvjmax30A
Gate-source voltage, max. transient voltageVGSD < 0.01-10/23V
Gate-source voltage, max. static voltageVGS-7/20V
MOSFET Characteristic Values
Drain-source on-resistanceRDS(on)ID = 15 A, VGS = 18 V, Tvj = 25 C52.9m
Drain-source on-resistanceRDS(on)ID = 15 A, VGS = 18 V, Tvj = 125 C85.5m
Drain-source on-resistanceRDS(on)ID = 15 A, VGS = 18 V, Tvj = 150 C98.5m
Gate threshold voltageVGS(th)ID = 6 mA, VDS = VGS, Tvj = 25 C3.45 to 5.15V
Total gate chargeQGVDD = 800 V, VGS = -3/18 V0.045C
Input capacitanceCISSf = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C1.35nF
Output capacitanceCOSSf = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C0.064nF
Reverse transfer capacitanceCrssf = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C0.004nF
Turn-on energy loss per pulseEonID = 15 A, VDD = 600 V, L = 6 nH, VGS = -3/18 V, RGon = 3.9 , di/dt = 1.8 kA/s (Tvj = 150 C), Tvj = 150 C0.316mJ
Turn-off energy loss per pulseEoffID = 15 A, VDD = 600 V, L = 6 nH, VGS = -3/18 V, RGoff = 3.3 , dv/dt = 27.7 kV/s (Tvj = 150 C), Tvj = 150 C0.042mJ
Thermal resistance, junction to heat sinkRthJHper MOSFET, grease = 1 W/(mK)1.25K/W
Temperature under switching conditionsTvj op-40 to 150C
Body Diode (MOSFET) Characteristic Values
Forward voltageVSDISD = 15 A, VGS = -3 V, Tvj = 25 C4.2 to 5.35V
Forward voltageVSDISD = 15 A, VGS = -3 V, Tvj = 150 C3.85V
NTC-Thermistor Characteristic Values
Rated resistanceR25TNTC = 25 C5k
B-valueB25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K

2410301840_Infineon-FF55MR12W1M1HB70BPSA1_C20190935.pdf

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