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quality soft starter module Infineon STT2200N18P55XPSA2 with pressure contact technology and optimized heatsink design factory
quality soft starter module Infineon STT2200N18P55XPSA2 with pressure contact technology and optimized heatsink design factory

soft starter module Infineon STT2200N18P55XPSA2 with pressure contact technology and optimized heatsink design

Key Attributes
Model Number: STT2200N18P55XPSA2
Product Custom Attributes
Mfr. Part #:
STT2200N18P55XPSA2
Product Description

Sanftanlauf-Modul Soft Starter Module

The Sanftanlauf-Modul Soft Starter Module, model sTT2200N18P55, utilizes advanced pressure contact technology and AMPT (Advanced Medium Power Technology) for high reliability. It features an integrated optimized heatsink, making it suitable for applications such as soft starters, bypass switches, power controllers, and static switches. This module is designed for professional use by technically trained personnel.

Product Attributes

  • Brand: Infineon BIP (implied by www.ifbip.com and support@infineon-bip.com)
  • Date of Publication: 2020-04-01
  • Revision: 3.1

Technical Specifications

ParameterSymbolValueUnitConditions
Repetitive peak forward off-state and reverse voltagesVDRM, VRRM1800VTvj = +25C...Tvj max
Non-repetitive peak forward off-state and reverse voltageVDSM, VRSM1850VTvj = +25C...Tvj max
Overload currentIoverload2180AW1C; sin.180;t overload= 21s; Tvj=155C; Tvjstart=40C
Surge currentITSM21000ATvj = 25C, tP = 10ms
Surge currentITSM17500ATvj = Tvj max, tP = 10ms
It-valueIt2.205.000AsTvj = 25C, tP = 10ms
It-valueIt1.531.250AsTvj = Tvj max, tP = 10ms
Critical rate of rise of on-state current(diT/dt)cr250A/sDIN IEC 747-6; f = 50Hz, iGM = 1A, diG/dt = 1A/s
Critical rate of rise of off-state voltage(dvD/dt)cr1000V/sTvj = Tvj max, vD = 0,67 VDRM; 6th letter F
On-state voltagevT1.38VTvj = Tvj max , iT = 2000 A (max.)
Threshold voltageV(TO)0.9VTvj = Tvj max (max.)
Slope resistancerT0.24mTvj = Tvj max (max.)
Gate trigger currentIGT200mATvj = 25C, vD = 12V (max.)
Gate trigger voltageVGT2VTvj = 25C, vD = 12V (max.)
Gate non-trigger currentIGD10mATvj = Tvj max , vD = 12V (max.)
Gate non-trigger currentIGD5mATvj = Tvj max , vD = 0,5 VDRM (max.)
Gate non-trigger voltageVGD0.2VTvj = Tvj max , vD = 0,5 VDRM (max.)
Holding currentIH300mATvj = 25C, vD = 12V, RA = 1 (max.)
Latching currentIL1200mATvj = 25C, vD = 12V, RGK 10 (max.)
Forward off-state and reverse currentiD+ iR240mATvj = Tvj max, vD = VDRM, vR = VRRM (max.)
Gate controlled delay timetgd3sDIN IEC 747-6; Tvj = 25C, iGM = 1A, diG/dt = 1A/s (max.)
Circuit commutated turn-off timetq250styp.; Tvj = Tvj max, iTM = ITAVM, vRM = 100 V, vDM = 0,67 VDRM, dvD/dt = 20 V/s, -diT/dt = 10 A/s; 5th letter O
Thermal resistance, junction to reference point (per Module, DC)RthJR(21s)0.028K/Wmax.
Thermal resistance, junction to reference point (per Arm, DC)RthJR(21s)0.056K/Wmax.
Thermal resistance, junction to reference point (per Module, = 180 sin)RthJR(21s)0.029K/Wmax.
Thermal resistance, junction to reference point (per Arm, = 180 sin)RthJR(21s)0.058K/Wmax.
Thermal resistance, junction to ambient (per Module, DC)RthJA(21s)0.041K/Wmax.
Thermal resistance, junction to ambient (per Arm, DC)RthJA(21s)0.082K/Wmax.
Thermal resistance, junction to ambient (per Module, = 180 sin)RthJA(21s)0.042K/Wmax.
Thermal resistance, junction to ambient (per Arm, = 180 sin)RthJA(21s)0.084K/Wmax.
Maximum junction temperatureTvj max125C2)
Operating temperatureTc op-40...+125C2)
Storage temperatureTstg-40...+130C
Terminal connection torque (M6)10Nm 10% tolerance
WeightG1340gtyp.
Creepage distance6.3mm
Vibration resistance50m/sf = 50 Hz

2411261535_Infineon-STT2200N18P55XPSA2_C20192448.pdf

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