Silicon NPN Darlington Transistor ISC 2N6039 with 80 Volt Collector Emitter Sustaining Voltage Rating
Key Attributes
Model Number:
2N6039
Product Custom Attributes
Current - Collector Cutoff:
100uA
Type:
NPN
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
2N6039
Package:
TO-126
Product Description
Product Overview
The ISC 2N6039 is a Silicon NPN Darlington Power Transistor designed for general-purpose switching and amplifier applications. It features a high DC current gain of 750(Min)@IC=2A and a Collector-Emitter Sustaining Voltage of 80V(Min). It is a complement to the 2N6036 type.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Material: Silicon
Technical Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 50mA; IB= 0 | 80 | V | |
| VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 2 A ;IB= 8mA | 2.0 | V | |
| VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 4A ;IB= 40mA | 3.0 | V | |
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 4A ;IB= 40mA | 4.0 | V | |
| VBE(on) | Base-Emitter On Voltage | IC= 2A ;VCE= 3V | 2.8 | V | |
| ICEX | Collector Cutoff Current | VCE= 80V; VBE= -1.5V | 0.1 | mA | |
| ICEX | Collector Cutoff Current | VCE= 80V; VBE= -1.5V;TC= 125 | 0.5 | mA | |
| ICBO | Collector Cutoff Current | VCB= 80V; IE= 0 | 0.1 | mA | |
| ICEO | Collector Cutoff Current | VCE= 80V; IB= 0 | 0.1 | mA | |
| IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | 2.0 | mA | |
| hFE-1 | DC Current Gain | IC= 0.5 A ; VCE= 3V | 500 | ||
| hFE-2 | DC Current Gain | IC= 2A ; VCE= 3V | 750 | 25000 | |
| hFE-3 | DC Current Gain | IC= 4 A ; VCE= 3V | 100 |
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-Base Voltage | 80 | V |
| VCEO | Collector-Emitter Voltage | 80 | V |
| VEBO | Emitter-Base Voltage | 5 | V |
| IC | Collector Current-Continuous | 4 | A |
| ICM | Collector Current-Peak | 8 | A |
| IB | Base Current | 0.1 | A |
| PC | Collector Power Dissipation TC=25 | 40 | W |
| TJ | Junction Temperature | 150 | |
| Tstg | Storage Temperature Range | -65~150 | |
| Rth j-c | Thermal Resistance,Junction to Case | 3.12 | /W |
2410122028_ISC-2N6039_C491411.pdf
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