Silicon PNP Darlington Transistor ISC BD678 Featuring 60V Collector Emitter Breakdown Voltage and 750 Gain
Key Attributes
Model Number:
BD678
Product Custom Attributes
Mfr. Part #:
BD678
Package:
TO-126
Product Description
Product Overview
The ISC BD678 is a Silicon PNP Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -60V and a minimum DC Current Gain (hFE) of 750 @ IC= -1.5 A. This transistor is a complement to the BD677 type.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Material: Silicon
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; IB= 0 | -60 | V |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= -1.5A; IB= -30mA | -2.5 | V |
| VBE(on) | Base-Emitter On Voltage | IC= -1.5A; VCE= -3V | -2.5 | V |
| ICEO | Collector Cutoff Current | VCE= -60V; IB= 0 | -0.5 | mA |
| ICBO | Collector Cutoff Current | VCB= -60V; IE= 0 | -0.2 | mA |
| ICBO | Collector Cutoff Current | VCB= -60V; IE= 0;TC= 100 | -2.0 | mA |
| IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 | -2.0 | mA |
| hFE | DC Current Gain | IC= -1.5 A ; VCE= -3V | 750(Min) | |
| VCBO | Collector-Base Voltage | -60 | V | |
| VCEO | Collector-Emitter Voltage | -60 | V | |
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current-Continuous | -4 | A | |
| IB | Base Current | -0.1 | A | |
| PC | Collector Power Dissipation | TC=25 | 40 | W |
| Ti | Junction Temperature | 150 | ||
| Tstg | Storage Temperature Range | -55~150 | ||
| Rth j-c | Thermal Resistance, Junction to Case | 3.13 | /W |
2412061749_ISC-BD678_C491408.pdf
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