Trench IGBT device JIAENSEMI JNG25T120HJS1 offering soft current turn off and square RBSOA waveforms
Key Attributes
Model Number:
JNG25T120HJS1
Product Custom Attributes
Pd - Power Dissipation:
428W
Td(off):
184ns
Td(on):
31ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
20pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.8V@1mA
Gate Charge(Qg):
133nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
309ns
Switching Energy(Eoff):
900uJ
Turn-On Energy (Eon):
2mJ
Input Capacitance(Cies):
2.08nF
Pulsed Current- Forward(Ifm):
100A
Output Capacitance(Coes):
105pF
Mfr. Part #:
JNG25T120HJS1
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency, featuring soft current turn-off waveforms and square RBSOA. They are designed for applications such as motor control, general inverters, and other soft switching applications.
Product Attributes
- Brand: JIAEN
- Origin: www.jiaensemi.com
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VCES | Collector-Emitter Voltage | 1200 | V | |||
| VGES | Gate-Emitter Voltage | + 20 | V | |||
| IC | Continuous Collector Current (TC=25) | 50 | A | |||
| IC | Continuous Collector Current (TC=100) | 25 | A | |||
| ICM | Pulsed Collector Current (Note 1) | 100 | A | |||
| IF | Diode Continuous Forward Current (TC=100) | 25 | A | |||
| IFM | Diode Maximum Forward Current (Note 1) | 100 | A | |||
| tsc | Short Circuit Withstand Time | 10 | us | |||
| PD | Maximum Power Dissipation (TC=25) | 428 | W | |||
| PD | Maximum Power Dissipation (TC=100) | 214 | W | |||
| TJ | Operating Junction Temperature Range | -40 | +175 | |||
| TSTG | Storage Temperature Range | -55 | +150 | |||
| Rth j-c | Thermal Resistance, Junction to case for IGBT | 0.35 | / W | |||
| Rth j-c | Thermal Resistance, Junction to case for Diode | 0.9 | / W | |||
| Rth j-a | Thermal Resistance, Junction to Ambient | 40 | / W | |||
| BVCES | Collector-Emitter Breakdown Voltage | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| ICES | Collector-Emitter Leakage Current | VCE= 1200V, VGE= 0V | - | - | 250 | uA |
| IGES | Gate Leakage Current, Forward | VGE= + 20V, VCE= 0V | - | - | + 100 | nA |
| VGE(th) | Gate Threshold Voltage | VGE= VCE, IC=1mA | 5.8 | 6.1 | 6.3 | V |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC= 25A | - | 1.7 | - | V |
| Qg | Total Gate Charge | VCC=960V VGE=15V IC=25A | - | 133 | - | nC |
| td(on) | Turn-on Delay Time | VCC=600V VGE=15V IC=25A RG=10 Inductive Load TC=25 | - | 31 | - | ns |
| tr | Turn-on Rise Time | - | 62 | - | ns | |
| td(off) | Turn-off Delay Time | - | 184 | - | ns | |
| tf | Turn-off Fall Time | - | 59 | - | ns | |
| Eon | Turn-on Switching Loss | - | 2.0 | - | mJ | |
| Eoff | Turn-off Switching Loss | - | 0.9 | - | mJ | |
| Ets | Total Switching Loss | - | 2.9 | - | mJ | |
| Cies | Input Capacitance | VCE=30V VGE=0V f = 1MHz | - | 2080 | - | pF |
| Coes | Output Capacitance | - | 105 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 20 | - | pF | |
| VF | Diode Forward Voltage | IF=25A | - | 2.0 | - | V |
| trr | Diode Reverse Recovery Time | VCE = 600V IF= 25A dIF/dt = 250A/us | - | 309 | - | ns |
| Irr | Diode peak Reverse Recovery Current | - | 7 | - | A | |
| Qrr | Diode Reverse Recovery Charge | - | 1038 | - | nC |
2509021810_JIAENSEMI-JNG25T120HJS1_C51484268.pdf
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