Power Electronics Diode JIAENSEMI JCD30S120T6 Silicon Carbide Schottky for SMPS and Renewable Energy

Key Attributes
Model Number: JCD30S120T6
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
340A
Reverse Leakage Current (Ir):
50uA@1200V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.7V@30A
Current - Rectified:
30A
Mfr. Part #:
JCD30S120T6
Package:
TO-247-2
Product Description

JCD30S120T6 Silicon Carbide Schottky Diode

The JCD30S120T6 is a Silicon Carbide Schottky Diode designed for high-efficiency power applications. It features a positive temperature coefficient for VF, enabling parallel operation without thermal runaway. This unipolar rectifier offers zero reverse recovery current, low leakage current, and temperature-independent switching behavior, leading to essentially no switching losses, higher efficiency, and reduced heatsink requirements. It is ideal for use in Switch Mode Power Supplies (SMPS), 5G base stations, high-efficiency power supplies, photovoltaic inverters, and solar/new energy vehicles.

Product Attributes

  • Brand: jiaenSemiconductor
  • Material: Silicon Carbide
  • Product Number: JCD30S120T6
  • Package: TO-247-2
  • Part Number: JCD30S120T6
  • Package Marking: JCD30S120T6

Technical Specifications

SymbolParameterValueUnitTest Conditions
VRRMRepetitive Peak Reverse Voltage1200V
VRSMSurge Peak Reverse Voltage1200V
VDCDC Blocking Voltage1200V
IFContinuous Forward Current79ATC=25C
35TC=135C
30TC=150C
IFRMRepetitive Peak Forward Surge Current115ATC=25C, tP = 10 ms, Half Sine Wave
65TC=110C, tP = 10 ms, Half Sine Wave
IFSMNon-Repetitive Peak Forward Surge Current340ATC=25C, tp = 8.33ms, Half Sine Wave
240TC=110C, tp = 10ms, Half Sine Wave
PtPower Dissipation355WTC=25C
150TC=110C
TJ , TstgOperating Junction and Storage Temperature-55 to +175C
VFForward Voltage1.48VIF = 30 A, TJ=25C
1.7IF = 30 A, TJ=175C
IRReverse Current50AVR = 1200 V, TJ=25C
250VR = 1200 V, TJ=175C
QCTotal Capacitive Charge128nCdi/dt = 200 A/s, VR = 800 V, IF = 30 A, TJ = 25C
CTotal Capacitance1921pFVR = 0 V, TJ = 25C, f = 1 MHz
110VR = 400 V, TJ = 25C, f = 1 MHz
97VR = 800 V, TJ = 25C, f = 1 MHz
ECCapacitance Stored Energy45JVR = 800 V
RJCThermal Resistance from Junction to Case0.43C/W

2509021810_JIAENSEMI-JCD30S120T6_C51484308.pdf

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