IGBT module JIAENSEMI JNG25T120HIRU2 featuring 1200 volt voltage rating and 50 amp collector current
Key Attributes
Model Number:
JNG25T120HIRU2
Product Custom Attributes
Pd - Power Dissipation:
277W
Td(off):
235ns
Td(on):
35ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
13.7pF
Input Capacitance(Cies):
2.251nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.4V@1mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
75A
Output Capacitance(Coes):
68pF
Reverse Recovery Time(trr):
248ns
Switching Energy(Eoff):
1.64mJ
Turn-On Energy (Eon):
1.27mJ
Mfr. Part #:
JNG25T120HIRU2
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them ideal for applications such as UPS, Induction converters, Uninterruptible power supplies, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.
Product Attributes
- Brand: JIAEN
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| IGBT Features | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | + 30 | V | |||
| Continuous Collector Current (TC=25) | IC | 50 | A | |||
| Continuous Collector Current (TC=100) | IC | 25 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 75 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 25 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 75 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 277 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 111 | W | |||
| Operating Junction Temperature Range | TJ | -40 | to | +175 | ||
| Storage Temperature Range | TSTG | -40 | to | +175 | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.45 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 1.5 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 1mA | 1200 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 1200V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE= + 30V, VCE= 0V | - | - | + 200 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 1mA | 4.4 | - | 6.4 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 25A | - | 1.8 | 2.3 | V |
| Total Gate Charge | Qg | VCC=600V VGE=15V IC=25A | - | 90.4 | - | nC |
| Gate-Emitter Charge | Qge | - | 23.6 | - | nC | |
| Gate-Collector Charge | Qgc | - | 40.2 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=600V VGE=15V IC=25A RG=15 Inductive Load TC=25 | - | 35 | - | ns |
| Turn-on Rise Time | tr | - | 50 | - | ns | |
| Turn-off Delay Time | td(off) | - | 235 | - | ns | |
| Turn-off Fall Time | tf | - | 170 | - | ns | |
| Turn-on Switching Loss | Eon | - | 1.27 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 1.64 | - | mJ | |
| Total Switching Loss | Ets | - | 2.91 | - | mJ | |
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 2251 | - | pF |
| Output Capacitance | Coes | - | 68 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 13.7 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=25A | - | 2.3 | 3.2 | V |
| Diode Reverse Recovery Time | trr | VCE = 600V IF= 25A dIF/dt = 7000A/us | - | 248 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 17.5 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 1526 | - | nC | |
2509021810_JIAENSEMI-JNG25T120HIRU2_C51484284.pdf
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