IGBT 1200V 40A JIAENSEMI JNG40T120HP Module Soft Current Turn Off for General Purpose Inverters
Key Attributes
Model Number:
JNG40T120HP
Product Custom Attributes
Pd - Power Dissipation:
415W
Td(off):
470ns
Td(on):
85ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
90pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Operating Temperature:
-50℃~+150℃
Gate Charge(Qg):
380nC@15V
Reverse Recovery Time(trr):
200ns
Switching Energy(Eoff):
3.6mJ
Turn-On Energy (Eon):
2.8mJ
Input Capacitance(Cies):
4.5nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
190pF
Mfr. Part #:
JNG40T120HP
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as induction heating, UPS, AC & DC motor controls, and general-purpose inverters. The JNG40T120HP features 1200V, 40A capability with a typical VCE(sat) of 1.85V, high-speed switching, and soft current turn-off waveforms, contributing to higher system efficiency.
Product Attributes
- Brand: JIAEN
- Model: JNG40T120HP
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | 30 | V | |||
| Continuous Collector Current | IC | TC=25 | 80 | A | ||
| Continuous Collector Current | IC | TC=100 | 40 | A | ||
| Pulsed Collector Current | ICM | Note 1 | 160 | A | ||
| Diode Continuous Forward Current | IF | TC=100 | 40 | A | ||
| Diode Maximum Forward Current | IFM | Note 1 | 160 | A | ||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation | PD | TC=25 | 415 | W | ||
| Maximum Power Dissipation | PD | TC=100 | 165 | W | ||
| Operating Junction Temperature Range | TJ | -50 | 150 | |||
| Storage Temperature Range | TSTG | -50 | 150 | |||
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | 0.29 | / W | |||
| Thermal Resistance, Junction to case (Diode) | Rth j-c | 0.65 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 1200V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=30V, VCE= 0V | - | - | 100 | nA |
| Gate Leakage Current, Reverse | IGES | VGE= -30V, VCE= 0V | - | - | -100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 4.5 | - | 6.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 40A | - | 1.85 | 2.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 40A, Tc = 125 | - | 2.05 | - | V |
| Turn-on Delay Time | td(on) | VCC=600V, VGE=15V, IC=40A, RG=15, Inductive Load, TC=25 | - | 85 | - | ns |
| Turn-on Rise Time | tr | - | 50 | - | ns | |
| Turn-off Delay Time | td(off) | - | 470 | - | ns | |
| Turn-off Fall Time | tf | - | 210 | - | ns | |
| Turn-on Switching Loss | Eon | - | 2.8 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 3.6 | - | mJ | |
| Total Switching Loss | Ets | - | 6.4 | - | mJ | |
| Input Capacitance | Cies | VCE=30V, VGE=0V, f = 1MHz | - | 4500 | - | pF |
| Output Capacitance | Coes | - | 190 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 90 | - | pF | |
| Total Gate Charge | Qg | VCC =600V, VGE =15V, IC = 40A | - | 380 | - | nC |
| Gate-Emitter Charge | Qge | - | 25 | - | nC | |
| Gate-Collector Charge | Qgc | - | 215 | - | nC | |
| Diode Forward Voltage | VF | IF= 40A | - | 2.0 | 2.8 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V, IF= 40A, dIF/dt = 200A/us | - | 200 | - | ns |
| Diode peak Reverse Recovery Current | Irr | - | 16 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 1800 | - | nC |
2509021810_JIAENSEMI-JNG40T120HP_C51484271.pdf
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