Jilin Sino Microelectronics JCS3AN150AA N channel MOSFET with low gate charge and fast switching speed
Key Attributes
Model Number:
JCS3AN150AA
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
-
Output Capacitance(Coss):
127pF
Input Capacitance(Ciss):
824pF
Pd - Power Dissipation:
69W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
JCS3AN150AA
Package:
TO-3P
Product Description
Product Overview
The JCS3AN150A is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rdson-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS3AN150CA-C-B / JCS3AN150CA-C-BR | N/A | TO-220C | 3 | 1500 | 8.0 | 37 |
| JCS3AN150FA-F-B / JCS3AN150FA-F-BR | N/A | TO-220MF | 3 | 1500 | 8.0 | 37 |
| JCS3AN150AA-A-B / JCS3AN150AA-A-BR | N/A | TO-3P(H)IS | 3 | 1500 | 8.0 | 37 |
| JCS3AN150WA-W-B / JCS3AN150WA-W-BR | N/A | TO-247 | 3 | 1500 | 8.0 | 37 |
| JCS3AN150SA-S-BR / JCS3AN150SA-S-AR | N/A | TO-263 | 3 | 1500 | 8.0 | 37 |
| JCS3AN150BA-B-BR | N/A | TO-262 | 3 | 1500 | 8.0 | 37 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 1500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A, referenced to 25 | - | 0.5 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=1500V, VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=1500V, TC=125 | - | - | 500 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Forward Transconductance | gfs | VDS = 30V , ID=3note 3 | - | 5.8 | - | S |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=1.5A | - | 6.3 | 8 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 824 | - | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 127 | - | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 29 | - | pF |
| Total Gate Charge | Qg | VDS =750V , ID=3A VGS =10Vnote 34 | - | 37 | - | nC |
| Gate-Source charge | Qgs | VDS =750V , ID=3A VGS =10Vnote 34 | - | 6 | - | nC |
| Gate-Drain charge | Qgd | VDS =750V , ID=3A VGS =10Vnote 34 | - | 22 | - | nC |
| Forward on voltage | VSD | VGS=0V, IS=3A | - | 1.6 | - | V |
| Reverse recovery time | trr | VGS=0VIS=3A dIF/dt=100A/s (note 3) | - | 376 | - | ns |
| Reverse recovery charge | Qrr | VGS=0VIS=3A dIF/dt=100A/s (note 3) | - | 2.1 | - | C |
2411201840_Jilin-Sino-Microelectronics-JCS3AN150AA_C2693254.pdf
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