switching IGBT JIAENSEMI JNG75T65HMU2 suitable for boost converters UPS and portable power stations
Key Attributes
Model Number:
JNG75T65HMU2
Product Custom Attributes
Pd - Power Dissipation:
395W
Td(off):
187ns
Td(on):
32ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
154pF
Input Capacitance(Cies):
5.66nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Operating Temperature:
-55℃~+175℃
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
260pF
Reverse Recovery Time(trr):
73ns
Switching Energy(Eoff):
2.33mJ
Turn-On Energy (Eon):
3.04mJ
Mfr. Part #:
JNG75T65HMU2
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs are designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. They are suitable for applications such as motor drives, UPS, Boost converters, portable power stations, and other soft switching scenarios.
Product Attributes
- Brand: JIAEN
- Origin: www.jiaensemi.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| IGBT Characteristics | VCES | 650 | V | |||
| VCE(sat) | VGE=15V, IC=75A | 1.6 | 2.0 | V | ||
| BVCES | VGE=0V, IC=250uA | 650 | V | |||
| Diode Characteristics | IF | TC=100 | 40 | A | ||
| VF | IF=40A | 1.85 | 2.15 | V | ||
| trr | VCE=400V, IF=40A, dif/dt=200A/ns | 73 | ns | |||
| Maximum Ratings | IC | TC=25 | 150 | A | ||
| ICM | (Note 1) | 300 | A | |||
| PD | TC=25 | 395 | W | |||
| Thermal Characteristics | Rth j-c (IGBT) | 0.38 | /W | |||
| Rth j-a | 40 | /W |
2509021810_JIAENSEMI-JNG75T65HMU2_C51484262.pdf
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