trench IGBT JIAENSEMI JNG40T65HMU1 with positive temperature coefficient and fast switching capability
Key Attributes
Model Number:
JNG40T65HMU1
Product Custom Attributes
Pd - Power Dissipation:
227W
Td(off):
104ns
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
67pF
Input Capacitance(Cies):
2.54nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Operating Temperature:
-55℃~+175℃
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
126pF
Reverse Recovery Time(trr):
55ns
Switching Energy(Eoff):
930uJ
Turn-On Energy (Eon):
950uJ
Mfr. Part #:
JNG40T65HMU1
Package:
TO-247
Product Description
Product Overview
The JNG40T65HMU1 from JIAEN is a Trench IGBT designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. Its features include high-speed switching, a positive temperature coefficient, and a reliable, rugged design with low VCE(sat). This IGBT is suitable for motor drives, solar inverters, resonant converters, and other soft switching applications.
Product Attributes
- Brand: JIAEN
- Model: JNG40T65HMU1
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | VCES | 650 | V | |||
| VGES | +30 | V | ||||
| IC (TC=25) | 80 | A | ||||
| IC (TC=100) | 40 | A | ||||
| Electrical Characteristics | BVCES | VGE=0V, IC=250uA | 650 | - | - | V |
| ICES | VCE=650V, VGE=0V | - | - | 100 | uA | |
| VGE(th) | VGE=VCE, IC=1mA | 4.3 | - | 6.3 | V | |
| Switching Characteristics | td(on) | VCC=400V, VGE=15V, IC=40A, RG=5, Inductive Load, TC=25 | - | 20 | - | ns |
| tr | - | 67 | - | ns | ||
| Diode Characteristics | VF | IF=40A | - | 1.65 | 3.2 | V |
| trr | VCE=400V, IF=40A, dif/dt=200A/us | - | 55 | - | ns |
2509021810_JIAENSEMI-JNG40T65HMU1_C51484257.pdf
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