Trench IGBT JIAENSEMI JNG30T65HS1 with 30A Diode Continuous Forward Current and High Speed Switching
Key Attributes
Model Number:
JNG30T65HS1
Product Custom Attributes
Td(off):
86ns
Pd - Power Dissipation:
297W
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11.8pF
Input Capacitance(Cies):
1.34nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
98pF
Reverse Recovery Time(trr):
148ns
Switching Energy(Eoff):
500uJ
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
JNG30T65HS1
Package:
TO-247
Product Description
Product Overview
The JNG30T65HS1 is a Trench IGBT from JIAEN Semiconductor, designed for lower losses and higher energy efficiency. It features high-speed switching and soft current turn-off waveforms, making it suitable for applications requiring higher system efficiency.
Product Attributes
- Brand: JIAEN Semiconductor
- Product Line: Trench IGBTs
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 60 | A | |||
| Continuous Collector Current (TC=100) | IC | 30 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 90 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 30 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 90 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 297 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 119 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | V | ||
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | 100 | uA | ||
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | 100 | nA | ||
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | 6.9 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 30A | 2.0 | 2.5 | V | |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=30A | 594 | nC | ||
| Gate-Emitter Charge | Qge | 119 | nC | |||
| Gate-Collector Charge | Qgc | 374 | nC | |||
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=30A RG=15 Inductive Load TC=25 | 19 | ns | ||
| Turn-on Rise Time | tr | 65 | ns | |||
| Turn-off Delay Time | td(off) | 86 | ns | |||
| Turn-off Fall Time | tf | 98 | ns | |||
| Turn-on Switching Loss | Eon | 1.3 | mJ | |||
| Turn-off Switching Loss | Eoff | 0.5 | mJ | |||
| Total Switching Loss | Ets | 1.8 | mJ | |||
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | 1340 | pF | ||
| Output Capacitance | Coes | 98 | pF | |||
| Reverse Transfer Capacitance | Cres | 11.8 | pF | |||
| Diode Forward Voltage | VF | IF=30A | 1.5 | 3.0 | V | |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 30A Rg=15 | 148 | ns | ||
| Diode peak Reverse Recovery Current | Irr | 13.8 | A | |||
| Diode Reverse Recovery Charge | Qrr | 1055 | nC | |||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.42 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 1.4 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W |
2509021810_JIAENSEMI-JNG30T65HS1_C51484253.pdf
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