Jilin Sino Microelectronics 3DD4242DT 92 transistor for energy saving lights and power supply circuits

Key Attributes
Model Number: 3DD4242DT-92
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
20W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
3DD4242DT-92
Package:
TO-92-3
Product Description

Product Overview

The 3DD4242D is a high-performance transistor designed for applications requiring high voltage and current capabilities. It features high breakdown voltage, high current capacity, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This RoHS-compliant product offers excellent performance and durability.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd
  • Certifications: RoHS

Technical Specifications

Order CodeMarkingPackageHalogen-ReelHalogen-Free-ReelHalogen-BagHalogen-Free-BagHalogen-TubeHalogen-Free-Tube
3DD4242D-NB-A4242DSOT-89
3DD4242D-NB-AR4242DSOT-89
3DD4242D-NB-C4242DSOT-89
3DD4242D-NB-CR4242DSOT-89
3DD4242D-T-A4242DTO-92
3DD4242D-T-AR4242DTO-92
3DD4242D-T-C4242DTO-92
3DD4242D-T-CR4242DTO-92
3DD4242D-T1-A4242DTO-92-F1
3DD4242D-T1-AR4242DTO-92-F1
3DD4242D-T1-C4242DTO-92-F1
3DD4242D-T1-CR4242DTO-92-F1
3DD4242D-R-A4242DDPAK
3DD4242D-R-AR4242DDPAK
3DD4242D-R-C4242DDPAK
3DD4242D-R-CR4242DDPAK
3DD4242D-V-C4242DIPAK
3DD4242D-V-CR4242DIPAK
3DD4242D-V-B4242DIPAK
3DD4242D-V-BR4242DIPAK
3DD4242D-M-C4242DTO-126
3DD4242D-M-CR4242DTO-126
3DD4242D-M-B4242DTO-126
3DD4242D-M-BR4242DTO-126
3DD4242D-M1-C4242DTO-126S
3DD4242D-M1-CR4242DTO-126S
3DD4242D-M1-B4242DTO-126S
3DD4242D-M1-BR4242DTO-126S
ParameterSymbolValueUnitTest Conditions
Collector-Emitter Voltage (VBE=0)VCES700V
Collector-Emitter Voltage (IB=0)VCEO400V
Emitter-Base VoltageVEBO9V
Collector Current (DC)IC1.5A
Collector Current (pulse)ICP3.0A
Total Dissipation (TO-92/SOT-89)PC1W(Tc=25)
Total Dissipation (DPAK/IPAK)PC10W(Tc=25)
Total Dissipation (TO-126(S))PC20W(Tc=25)
Junction TemperatureTj150
Storage TemperatureTstg-55~+150
Thermal Resistance Junction Ambient (TO-92/TO-92-F1/SOT-89)Rth(j-a)125/W
Thermal Resistance Junction Case (DPAK/IPAK)Rth(j-c)12.5/W
Thermal Resistance Junction Case (TO-126(S))Rth(j-c)6.25/W
Collector-Emitter Breakdown VoltageV(BR)CEO400VIc=10mA,IB=0
Collector-Emitter Breakdown VoltageV(BR)CEO470VIc=10mA,IB=0
Collector-Base Breakdown VoltageV(BR)CBO700VIc=1mA,IE=0
Collector-Base Breakdown VoltageV(BR)CBO800VIc=1mA,IE=0
Emitter-Base Breakdown VoltageV(BR)EBO9VIE=1mA,Ic=0
Emitter-Base Breakdown VoltageV(BR)EBO16VIE=1mA,Ic=0
Collector Cut-off CurrentICBO5AVCB=700V, IE=0
Emitter Cut-off CurrentICEO10AVCE=400V,IB=0
Emitter Cut-off CurrentIEBO5AVEB=7V, IC=0
DC Current GainhFE19-VCE=10V, IC=100mA
DC Current GainhFE22-VCE=10V, IC=100mA
DC Current GainhFE25-VCE=10V, IC=100mA
DC Current GainhFE3.0-VCE=5V, IC=1.5A
DC Current GainhFE7.0-VCE=5V, IC=1.5A
Collector-Emitter Saturation VoltageVCE(sat)0.2VIC=0.5A, IB=100mA
Collector-Emitter Saturation VoltageVCE(sat)0.8VIC=0.5A, IB=100mA
Base-Emitter Saturation VoltageVBE(sat)0.9VIC=0.5A, IB=100mA
Base-Emitter Saturation VoltageVBE(sat)1.2VIC=0.5A, IB=100mA
Switching Time (ts)ts1.0SIC=0.25A
Switching Time (ts)ts4.0SIC=0.25A
Transition FrequencyfT4MHzVCE=10V, Ic=0.1A

2409280032_Jilin-Sino-Microelectronics-3DD4242DT-92_C272485.pdf

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