Power transistor Jilin Sino Microelectronics 3DD4243DT 92 with high switching speed and breakdown voltage
Key Attributes
Model Number:
3DD4243DT-92
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
40W
Transition Frequency(fT):
-
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
3DD4243DT-92
Package:
TO-92-3
Product Description
Product Overview
The 3DD4243D is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | - |
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | V | - |
| Emitter-Base Voltage | VEBO | 9 | V | - |
| Collector Current (DC) | IC | 2.0 | A | - |
| Collector Current (pulse) | ICP | 4.0 | A | - |
| Total Dissipation (TO-92/TO-92-F1) | PC | 1 | W | - |
| Total Dissipation (IPAK/DPAK) | PC | 10 | W | - |
| Total Dissipation (TO-126(S)) | PC | 20 | W | - |
| Total Dissipation (TO-220) | PC | 40 | W | - |
| Junction Temperature | Tj | 150 | - | |
| Storage Temperature | Tstg | -55~+150 | - | |
| Thermal Resistance Junction Ambient (TO-92/TO-92-F1) | Rth(j-a) | 125 | /W | - |
| Thermal Resistance Junction Case (IPAK/DPAK) | Rth(j-c) | 12.5 | /W | - |
| Thermal Resistance Junction Case (TO-126(S)) | Rth(j-c) | 6.25 | /W | - |
| Thermal Resistance Junction Case (TO-220) | Rth(j-c) | 3.125 | /W | - |
| Breakdown Voltage CEO | V(BR)CEO | 400 | V | Ic=10mA,IB=0 |
| Breakdown Voltage CBO | V(BR)CBO | 700 | V | Ic=1mA,IE=0 |
| Breakdown Voltage EBO | V(BR)EBO | 9 | V | IE=1mA,Ic=0 |
| Collector Cut-off Current | ICBO | 5 | A | VCB=700V, IE=0 |
| Collector Cut-off Current | ICEO | 10 | A | VCE=400V,IB=0 |
| Emitter Cut-off Current | IEBO | 5 | A | VEB=9V, IC=0 |
| DC Current Gain | hFE | 19-25 | - | VCE=5V, IC=200mA |
| DC Current Gain | hFE | 4-8 | - | VCE=5V, IC=2.0A |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.1-1.5 | V | IC=2.0A, IB=0.4A |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.0-1.2 | V | IC=1.0A, IB=0.2A |
| Switching Time (ts) | ts | 2.0-3.5 | uS | IC=0.25A |
2409280132_Jilin-Sino-Microelectronics-3DD4243DT-92_C272487.pdf
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