switching N channel MOSFET Jilin Sino Microelectronics JCS730RC with 1 ohm max Rds on and 5.5A ID rating
Key Attributes
Model Number:
JCS730RC
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
5.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5.8pF
Number:
-
Output Capacitance(Coss):
104pF
Input Capacitance(Ciss):
698pF
Pd - Power Dissipation:
5.5W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
JCS730RC
Package:
DPAK
Product Description
N-CHANNEL MOSFET JCS730C
The JCS730C is an N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss (typical 4.5pF), fast switching speed, 100% avalanche tested, and improved dv/dt capability. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | Main Characteristics (ID, VDSS, Rds(on)-max, Qg-typ) |
| JCS730VC-V-B / JCS730VC-V-BR | N/A | IPAK | ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC |
| JCS730RC-R-B / JCS730RC-R-BR / JCS730RC-R-A / JCS730RC-R-AR | JCS730RC | DPAK | ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC |
| JCS730SC-S-B / JCS730SC-S-BR / JCS730SC-S-A / JCS730SC-S-AR | JCS730SC | TO-263 | ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC |
| JCS730BC-B-B / JCS730BC-B-BR | JCS730BC | TO-262 | ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC |
| JCS730CC-C-B / JCS730CC-C-BR | JCS730CC | TO-220C | ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC |
| JCS730FC-F-B / JCS730FC-F-BR | JCS730FC | TO-220MF | ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC |
Absolute Maximum Ratings
| Parameter | Symbol | JCS730 VC/RC | JCS730SC /BC/CC | JCS730FC | Unit |
| Drain-Source Voltage | VDSS | 400 | V | ||
| Drain Current -continuous (Tc=25) | ID | 5.5 | 5.5* | 5.5* | A |
| Drain Current -continuous (Tc=100) | ID | 3.5 | 3.5* | 3.5* | A |
| Drain Current - pulse (note 1) | IDM | 22 | 22* | 22* | A |
| Gate-Source Voltage | VGSS | 30 | V | ||
| Single Pulsed Avalanche Energy (note 2) | EAS | 328 | mJ | ||
| Avalanche Current (note 1) | IAR | 5.5 | A | ||
| Repetitive Avalanche Energy (note 1) | EAR | 7.3 | mJ | ||
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns | ||
| Power Dissipation (TC=25) | PD | 59 | 73 | 38 | W |
| Power Dissipation -Derate above 25 | - | 0.48 | 0.58 | 0.3 | W/ |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |||
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 400 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.4 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=400V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=320V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.75A | - | 0.85 | 1.0 | |
| Forward Transconductance | gfs | VDS = 40V, ID=2.75Anote 4 | - | 4.95 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 537.4 | 698 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 80.6 | 104 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 4.5 | 5.8 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=200V,ID=5.5A,RG=25 note 45 | - | 17 | 40 | ns |
| Turn-On rise time | tr | VDD=200V,ID=5.5A,RG=25 note 45 | - | 20 | 120 | ns |
| Turn-Off delay time | td(off) | VDD=200V,ID=5.5A,RG=25 note 45 | - | 45 | 180 | ns |
| Turn-Off Fall time | tf | VDD=200V,ID=5.5A,RG=25 note 45 | - | 18 | 110 | ns |
| Total Gate Charge | Qg | VDS =320V , ID=5.5A VGS =10V note 45 | - | 14 | 17 | nC |
| Gate-Source charge | Qgs | VDS =320V , ID=5.5A VGS =10V note 45 | - | 3.1 | - | nC |
| Gate-Drain charge | Qgd | VDS =320V , ID=5.5A VGS =10V note 45 | - | 5.4 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 5.5 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 22 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=5.5A | - | - | 1.5 | V |
| Reverse recovery time | trr | VGS=0V, IS=5.5A dIF/dt=100A/s (note 4) | - | 278 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=5.5A dIF/dt=100A/s (note 4) | - | 1.13 | - | C |
Thermal Characteristics
| Parameter | Symbol | JCS730V/R | JCS730S/B/C | JCS730F | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.05 | 1.71 | 3.31 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | 62.5 | 62.5 | /W |
2409280101_Jilin-Sino-Microelectronics-JCS730RC_C2693243.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
