Low gate charge MOSFET Jilin Sino Microelectronics JCS4N65RC DPAK for electronic ballast applications
Key Attributes
Model Number:
JCS4N65RC-DPAK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
810pF
Pd - Power Dissipation:
122W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
JCS4N65RC-DPAK
Package:
DPAK
Product Description
Product Overview
The JCS4N65C is a high-performance N-channel MOSFET designed for demanding power applications. It offers low gate charge, fast switching speeds, and improved dv/dt capability, making it ideal for high-frequency switching power supplies, electronic ballasts, and LED power supplies. The product is 100% avalanche tested and RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | Halogen-Tube | Halogen-Free-Tube | Halogen-Reel | Halogen-Free-Reel | Main Characteristics (ID, VDSS, Rds(on), Qg) |
| JCS4N65VC-V-B | JCS4N65V | IPAK | ✔ | ✔ | N/A | N/A | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC |
| JCS4N65RC-R-B | JCS4N65RC-R-AR | DPAK | ✔ | ✔ | ✔ | ✔ | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC |
| JCS4N65CC-C-B | JCS4N65C | TO-220C | N/A | N/A | N/A | N/A | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC |
| JCS4N65FC-F-B | JCS4N65F | TO-220MF | ✔ | ✔ | N/A | N/A | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC |
| JCS4N65FC-F2-B | JCS4N65F | TO-220MF-K2 | ✔ | ✔ | N/A | N/A | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC |
| JCS4N65FC-F4-B | JCS4N65F | TO-220MF-K4 | ✔ | ✔ | N/A | N/A | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC |
| JCS4N65BC-B-B | JCS4N65B | TO-262 | ✔ | ✔ | N/A | N/A | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC |
| JCS4N65MC-M-B | JCS4N65M | TO-126-K1 | ✔ | ✔ | N/A | N/A | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC |
| JCS4N65MFC-MF-B | JCS4N65MF | TO-126F | ✔ | ✔ | N/A | N/A | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Applicable Packages |
| Drain-Source Voltage | VDSS | 650 | V | All |
| Drain Current -continuous (T=25) | ID | 4.0* | A | All |
| Drain Current -continuous (T=100) | ID | 3.2 | A | JCS4N65VC/RC/BC/MC/MFC |
| Drain Current -continuous (T=100) | ID | 2.5* | A | JCS4N65CC |
| Drain Current -continuous (T=100) | ID | 2.5* | A | JCS4N65FC |
| Drain Current -continuous (T=100) | ID | 2.5* | A | JCS4N65FC-K2/K4 |
| Drain Current - pulse (note 1) | IDM | 16* | A | All |
| Gate-Source Voltage | VGSS | 30 | V | All |
| Single Pulsed Avalanche Energy (note 2) | EAS | 256 | mJ | All |
| Avalanche Current (note 1) | IAR | 4.0 | A | All |
| Repetitive Avalanche Current (note 1) | EAR | 11.0 | mJ | All |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns | All |
| Power Dissipation (TC=25) | PD | 122 | W | JCS4N65VC/RC/BC/MC/MFC |
| Power Dissipation (TC=25) | PD | 138 | W | JCS4N65CC |
| Power Dissipation (TC=25) | PD | 49.8 | W | JCS4N65FC (TO-220MF) |
| Power Dissipation (TC=25) | PD | 38.8 | W | JCS4N65FC (TO-220MF-K2/K4) |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | All | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | All |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.65 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=520V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 25 | - | 2.1 | 2.6 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 100 | - | 3.68 | 4.2 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 150 | - | 5.46 | 6.2 | |
| Forward Transconductance | gfs | VDS = 40V , ID=2.0A (note 4) | - | 4.5 | - | S |
| Gate resistance | Rg | F=1.0MHZ open drain | 0.8 | - | 5.5 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | 200 | 490 | 810 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 20 | 100 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1 | 10 | pF |
| Turn-On delay time | td(on) | VDD=325V,ID=4.0A,RG=25 (note 4,5) | - | 49 | 100 | ns |
| Turn-On rise time | tr | VDD=325V,ID=4.0A,RG=25 (note 4,5) | - | 62 | 120 | ns |
| Turn-Off delay time | td(off) | VDD=325V,ID=4.0A,RG=25 (note 4,5) | - | 81 | 160 | ns |
| Turn-Off Fall time | tf | VDD=325V,ID=4.0A,RG=25 (note 4,5) | - | 21 | 50 | ns |
| Total Gate Charge | Qg | VDS =520V , ID=4.0A VGS =10V (note 4,5) | - | 14 | 22 | nC |
| Gate-Source charge | Qgs | VDS =520V , ID=4.0A VGS =10V (note 4,5) | - | 3 | 7.0 | nC |
| Gate-Drain charge | Qgd | VDS =520V , ID=4.0A VGS =10V (note 4,5) | - | 5 | 10.0 | nC |
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 4 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 16 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 280 | 800 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 2.0 | 6.8 | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit | Applicable Packages |
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.02 | /W | JCS4N65 VC/RC/BC/MC /MFC |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.905 | /W | JCS4N65 CC |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.51 | /W | JCS4N65FC (TO-220MF) |
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.22 | /W | JCS4N65FC (TO-220MF-K2/K4) |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 73.14 | /W | JCS4N65 VC/RC/BC/MC /MFC |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 59.3 | /W | JCS4N65 CC |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 41.3 | /W | JCS4N65FC (TO-220MF) |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 48.68 | /W | JCS4N65FC (TO-220MF-K2/K4) |
2409280002_Jilin-Sino-Microelectronics-JCS4N65RC-DPAK_C272525.pdf
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