Jilin Sino Microelectronics JCS630VA N channel MOSFET designed for switching power supply and UPS system
Key Attributes
Model Number:
JCS630VA
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
400mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
720pF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
JCS630VA
Package:
IPAK
Product Description
Product Overview
The JCS630A is an N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability. This RoHS-compliant product is available in various packages and configurations.
Product Attributes
- Brand: JCS
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS630VA-V-B / JCS630VA-V-BR | JCS630VA | IPAK | 9.0 | 200 | 0.4 | 22 |
| JCS630RA-R-B / JCS630RA-R-BR / JCS630RA-R-A / JCS630RA-R-AR | JCS630RA | DPAK | 9.0 | 200 | 0.4 | 22 |
| JCS630VA-V2-B / JCS630VA-V2-BR | JCS630VA | IPAK-S2 | 9.0 | 200 | 0.4 | 22 |
| JCS630BA-B-B / JCS630BA-B-BR | JCS630BA | TO-262 | 9.0 | 200 | 0.4 | 22 |
| JCS630SA-S-B / JCS630SA-S-BR / JCS630SA-S-A / JCS630SA-S-AR | JCS630SA | TO-263 | 9.0 | 200 | 0.4 | 22 |
| JCS630CA-C-B / JCS630CA-C-BR | JCS630CA | TO-220C | 9.0 | 200 | 0.4 | 22 |
| JCS630FA-F-B / JCS630FA-F-BR | JCS630FA | TO-220MF | 9.0 | 200 | 0.4 | 22 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | JCS630VA/RA | JCS630SA/BA/CA | JCS630FA | Unit |
| Drain-Source Voltage | VDSS | 200 | V | ||
| Drain Current -continuous ID T=25 | ID | 9.0 | 9.0* | 9.0* | A |
| Drain Current -continuous ID T=100 | ID | 5.7 | 5.7* | 5.7* | A |
| Drain Current -pulse (note 1) | IDM | 36 | 36* | 36* | A |
| Gate-Source Voltage | VGSS | 30 | V | ||
| Single Pulsed Avalanche Energy (note 2) | EAS | 162 | mJ | ||
| Avalanche Current (note 1) | IAR | 9.0 | A | ||
| Repetitive Avalanche Current (note 1) | EAR | 4.8 | 7.2 | 3.8 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns | ||
| Power Dissipation TC=25 | PD | 48 | 72 | 38 | W |
| Power Dissipation -Derate above 25 | PD | 0.39 | 0.57 | 0.3 | W/ |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |||
Electrical Characteristics (Tc=25 unless otherwise noted)
| Parameter | Symbol | Test conditions | Min | Typ | Max | Units |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 200 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A, referenced to 25 | - | 0.2 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=160V, TC=125 | - | - | 10 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=4.5A | - | 0.34 | 0.4 | |
| Forward Transconductance | gfs | VDS = 40V , ID=4.5Anote 4 | - | 7.05 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | - | 550 | 720 | pF |
| Output capacitance | Coss | - | - | 85 | 110 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 22 | 29 | pF |
Thermal Characteristics
| Parameter | Symbol | JCS630VA/ RA | JCS630SA/ BA/CA | JCS630FA | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.58 | 1.74 | 3.33 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W | ||
Switching Characteristics (note 4, 5)
| Parameter | Symbol | Test conditions | Min | Typ | Max | Units |
| Turn-On delay time | td(on) | VDD=100V,ID=9.0A,RG=25 VGS =10V | - | 11 | 30 | ns |
| Turn-On rise time | tr | - | - | 70 | 150 | ns |
| Turn-Off delay time | td(off) | - | - | 60 | 130 | ns |
| Turn-Off Fall time | tf | - | - | 65 | 140 | ns |
| Total Gate Charge | Qg | - | - | 22 | 29 | nC |
| Gate-Source charge | Qgs | - | - | 3.6 | - | nC |
| Gate-Drain charge | Qgd | VDS =160V , ID=9.0A VGS =10V | - | 10.2 | - | nC |
Drain-Source Diode Characteristics and Maximum Ratings
| Parameter | Symbol | Test conditions | Min | Typ | Max | Units |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | 9.0 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 36 | A | |
| Maximum Continuous Drain-Source Diode Forward Current | VSD | VGS=0V, IS=9.0A | - | 1.5 | - | V |
| Reverse recovery time | trr | - | - | - | 140 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=9.0A dIF/dt=100A/s (note 4) | - | 0.87 | - | C |
2409280203_Jilin-Sino-Microelectronics-JCS630VA_C2693297.pdf
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