Low gate charge MOSFET Jilin Sino Microelectronics JCS740C for switch mode power supplies and UPS systems
Key Attributes
Model Number:
JCS740C
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
10A
RDS(on):
540mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
33pF
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
809pF
Pd - Power Dissipation:
183W
Gate Charge(Qg):
25.6nC@10V
Mfr. Part #:
JCS740C
Package:
TO-220
Product Description
Product Overview
The JCS740C is an N-channel MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: JCS
- Origin: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on) (@Vgs=10V) () | Qg (nC) |
| JCS740VC-V-B / JCS740VC-V-BR | N/A | IPAK | 10 | 400 | 0.54 | 19.7 |
| JCS740RC-R-B / JCS740RC-R-BR / JCS740RC-R-A / JCS740RC-R-AR | JCS740RC | DPAK | 10 | 400 | 0.54 | 19.7 |
| JCS740BC-B-B / JCS740BC-B-BR | N/A | TO-262 | 10 | 400 | 0.54 | 19.7 |
| JCS740SC-S-B / JCS740SC-S-BR / JCS740SC-S-A / JCS740SC-S-AR | JCS740SC | TO-263 | 10 | 400 | 0.54 | 19.7 |
| JCS740CC-C-B / JCS740CC-C-BR | N/A | TO-220C | 10 | 400 | 0.54 | 19.7 |
| JCS740FC-F-B / JCS740FC-F-BR | N/A | TO-220MF | 10 | 400 | 0.54 | 19.7 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | JCS740 VC/RC | JCS740 SC/BC/CC | JCS740FC | Unit |
| Drain-Source Voltage | VDSS | 400 | V | ||
| Drain Current -continuous | ID | 10* (T=25), 6.3* (T=100) | 10* (T=25), 6.3* (T=100) | 10* (T=25), 6.3* (T=100) | A |
| Drain Current - pulse (note 1) | IDM | 40* | A | ||
| Gate-Source Voltage | VGSS | 30 | V | ||
| Single Pulsed Avalanche Energy (note 2) | EAS | 450 | mJ | ||
| Avalanche Current (note 1) | IAR | 10 | A | ||
| Repetitive Avalanche Current (note 1) | EAR | 13.4 | mJ | ||
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns | ||
| Power Dissipation TC=25 | PD | 183 (Derate above 25 1.47) | 134 (Derate above 25 1.08) | 44 (Derate above 25 0.35) | W W/ |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |||
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 400 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.4 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=400V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=320V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=5.0A | - | 0.43 | 0.54 | |
| Forward Transconductance | gfs | VDS =40V, ID=5.0Anote 4 | - | 9.6 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 650 | 809 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 70 | 95 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 25 | 33 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=200V,ID=10A,RG=25 note 45 | - | 20 | 50 | ns |
| Turn-On rise time | tr | VDD=200V,ID=10A,RG=25 note 45 | - | 80 | 170 | ns |
| Turn-Off delay time | td(off) | VDD=200V,ID=10A,RG=25 note 45 | - | 125 | 260 | ns |
| Turn-Off Fall time | tf | VDD=200V,ID=10A,RG=25 note 45 | - | 85 | 180 | ns |
| Total Gate Charge | Qg | VDS =320V , ID=10A VGS =10V note 45 | - | 19.7 | 25.6 | nC |
| Gate-Source charge | Qgs | VDS =320V , ID=10A VGS =10V note 45 | - | 7.38 | - | nC |
| Gate-Drain charge | Qgd | VDS =320V , ID=10A VGS =10V note 45 | - | 4.66 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 10 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 40 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=10A | - | 1.5 | - | V |
| Reverse recovery time | trr | VGS=0V, IS=10A dIF/dt=100A/s (note 4) | - | 217 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=10A dIF/dt=100A/s (note 4) | - | 2.45 | - | C |
Thermal Characteristics
| Parameter | Symbol | JCS740 VC/RC | JCS740 SC/BC/CC | JCS740FC | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.68 | 0.93 | 2.86 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | 62.5 | 62.5 | /W |
2409280130_Jilin-Sino-Microelectronics-JCS740C_C2693282.pdf
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