Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design
Key Attributes
Model Number:
JT015N065FED
Product Custom Attributes
Pd - Power Dissipation:
31W
Td(off):
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
880pF@25V
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6.5V@250uA
Gate Charge(Qg):
-
Operating Temperature:
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr):
-
Switching Energy(Eoff):
-
Turn-On Energy (Eon):
-
Mfr. Part #:
JT015N065FED
Package:
TO-220MF
Product Description
Product Overview
The JT015N065FED is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for general-purpose inverters and UPS power supplies. It features low gate charge, Trench FS Technology, and a typical saturation voltage of 1.6V at 15A and 25C. This RoHS-compliant product is available in a TO-220MF package.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Origin: China
- Material: N-channel IGBT
- Color: Not specified
- Certifications: RoHS
- Halogen Free: No
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| MAIN CHARACTERISTICS | ||||
| Collector Current (continuous) | IC | 15 | A | T=100 |
| Collector Current (continuous) | IC | 30 | A | T=25 |
| Collector-Emitter Voltage | VCES | 650 | V | - |
| Vcesat-typ | VCE(sat) | 1.6 | V | VGE=15V, IC=15A, TC=25 |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Collector-Emmiter Voltage | Vces | 650 | V | (Tc=25) |
| Collector Current-continuous | IC | 30 | A | (T=25) |
| Collector Current-continuous | IC | 15 | A | (T=100) |
| Collector Current pulse (note 1) | ICM | 45 | A | - |
| Gate-Emmiter Voltage | VGES | 20 | V | - |
| Power Dissipation | PD | 31 | W | TC=25 |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | - | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | - | |
| ELECTRICAL CHARACTERISTICS | ||||
| Collector-Emmiter Voltage | BVCES | 650 | V | IC=500A, VGE=0V |
| Breakdown Voltage Temperature Coefficient | BVCES/TJ | 0.5 | V/ | IC=1mA, referenced to 25 |
| Zero Gate Voltage Collector Current | ICES | 10 | A | VCE=650V, VGE=0V, TC=25 |
| Gate Threshold Voltage | VGE(th) | 4.0 - 6.5 | V | VCE = VGE , IC=250A |
| Collector-Emmiter saturation Voltage | VCESAT | 1.6 - 2.0 | V | VGE=15V IC=15A Tc=25 |
| Input capacitance | Cies | 880 | pF | VCE=25V, VGE=0V, f=1.0MHZ |
| Thermal Resistance, Junction to Case | Rth(j-c) | 4.8 | /W | - |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W | - |
| Anti-Parallel Diode Characteristics and Maximum Ratings | ||||
| Drain-Source Diode Forward Voltage | VF | 1.4 - 2.2 | V | VGE=0V, IS=15A |
2411201842_Jilin-Sino-Microelectronics-JT015N065FED_C2693274.pdf
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