High voltage N channel power mosfet Jingdao Microelectronics F10N65L designed for switching performance
Key Attributes
Model Number:
F10N65L
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
RDS(on):
1Ω@10V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
11pF
Pd - Power Dissipation:
65W
Input Capacitance(Ciss):
1.601nF@15V
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
F10N65L
Package:
TO-220F-3L
Product Description
Product Overview
The F10N65L is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers superior characteristics including fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideal for use in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: Green molding compound, UL flammability classification 94V-0,Halogen-free.
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 650 | V | Ta=25C, Unless Otherwise Specified |
| Gate-Source Voltage | VGSS | ±30 | V | Ta=25C, Unless Otherwise Specified |
| Continuous Drain Current | ID | 10 | A | Tc=25C |
| Pulsed Drain Current | IDM | 40 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 6.3 | mJ | Note 3 |
| Power Dissipation | PD | 500 | W | Tc = 25C |
| Operating junction and storage temperature | TJ,TSTG | -55 ~+150 | °C | |
| Thermal Resistance | ||||
| Thermal resistance, junction – case | RthJC | 4.0 | °C/W | Tc=25°C |
| Thermal resistance, junction – case | RthJC | 63 | °C/W | Tc=100°C |
| Thermal resistance, junction – ambient(min. footprint) | RthJA | 35 | °C/W | |
| Electrical Characteristics | ||||
| Off Characteristics | Ta=25°C, Unless Otherwise Specified | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V,ID=250uA |
| Gate-Source Leakage Current | IGSS | ±1.0 | μA | VGS=±30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1.0 | μA | VDS=650V,VGS=0V |
| On Characteristics | ||||
| Static Drain-Source On-State Resistance | RDS(ON) | 1.0 | Ω | VGS=10V,ID=5.0A |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| Dynamic Characteristics | ||||
| Input Capacitance | CISS | 160 | pF | VDS=15V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 137 | pF | VDS=15V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 11 | pF | VDS=15V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 32 | nC | VDS=520V,VGS=10V, ID=10A (NOTE1,2) |
| Gate-Drain Charge | QGD | 4.2 | nC | VDS=520V,VGS=10V, ID=10A (NOTE1,2) |
| Gate-Source Charge | QGS | 1.4 | nC | VDS=520V,VGS=10V, ID=10A (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 15 | ns | VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2) |
| Turn-On Rise Time | tR | 90 | ns | VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 18 | ns | VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2) |
| Turn-Off Fall Time | tF | 23 | ns | VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2) |
| Drain-source Diode Characteristics And Maximum Ratings | ||||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | ISD=10A,VGS=0V (Note 1) |
| Maximum Body-Diode Continuous Current | IS | 10 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 40 | A | |
| Reverse Recovery Time | trr | 320 | ns | IF=10A di/dt=100A/us ,VGS=0V (Note 1) |
| Reverse Recovery Charge | Qrr | 4.2 | μC | IF=10A di/dt=100A/us ,VGS=0V (Note 1) |
| Transconductance | gfs | 4.8 | S | VDS=15V,ID=2A |
2305040947_Jingdao-Microelectronics-F10N65L_C5632442.pdf
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