Silicon Planar Zener Diodes with Wide Voltage Range Jingdao Microelectronics BZT52C12S in SOD-323 Package
Key Attributes
Model Number:
BZT52C12S
Product Custom Attributes
Impedance(Zzt):
25Ω
Diode Configuration:
Independent
Zener Voltage(Range):
11.4V~12.7V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
12V
Mfr. Part #:
BZT52C12S
Package:
SOD-323
Product Description
Product Overview
Silicon Planar Zener Diodes with a wide zener reverse voltage range from 2.4V to 43V. These diodes offer a total power dissipation of max. 200mW and are ideally suited for automated assembly processes. Available in a SOD-323 package.
Product Attributes
- Brand: Jingdao Microelectronics
- Origin: China ()
- Material: Silicon Planar
- Package: SOD-323
Technical Specifications
| Type | Zener Voltage Range (VZ T @ IZT) Nom. (V) | Zener Voltage Range (VZ T @ IZT) Min. (V) | Zener Voltage Range (VZ T @ IZT) Max. (V) | Maximum Zener Current (IZT) (mA) | Maximum Zener Impedance (ZZT @ IZT) () | Maximum Reverse Current (IR @ VR) (A) | Typical Temperature Coefficient @ IZTC (mV/C) | Maximum Temperature Coefficient @ IZTC (mV/C) | Test Current IZTC (mA) |
| BZT52C2V4S | 2.4 | 2.2 | 2.5 | 600 | 100 | -3.5 | 1 | 1 | 5 |
| BZT52C2V7S | 2.7 | 2.5 | 2.9 | 600 | 100 | -3.5 | 1 | 1 | 5 |
| BZT52C3V0S | 3.0 | 2.8 | 3.2 | 600 | 95 | -3.5 | 1 | 1 | 5 |
| BZT52C3V3S | 3.3 | 3.1 | 3.5 | 600 | 95 | -3.5 | 1 | 1 | 5 |
| BZT52C3V6S | 3.6 | 3.4 | 3.8 | 600 | 90 | -3.5 | 1 | 1 | 5 |
| BZT52C3V9S | 3.9 | 3.7 | 4.1 | 600 | 90 | -3.5 | 1 | 1 | 5 |
| BZT52C4V3S | 4.3 | 4.0 | 4.6 | 600 | 90 | -3.5 | 1 | 1 | 5 |
| BZT52C4V7S | 4.7 | 4.4 | 5.0 | 500 | 80 | -3.5 | 1 | 1 | 5 |
| BZT52C5V1S | 5.1 | 4.8 | 5.4 | 480 | 60 | -2.7 | 1 | 1 | 5 |
| BZT52C5V6S | 5.6 | 5.2 | 6.0 | 400 | 40 | -2 | 1 | 1 | 5 |
| BZT52C6V2S | 6.2 | 5.8 | 6.6 | 150 | 10 | 0.4 | 1 | 1 | 5 |
| BZT52C6V8S | 6.8 | 6.4 | 7.2 | 150 | 15 | 1.2 | 1 | 1 | 5 |
| BZT52C7V5S | 7.5 | 7.0 | 7.9 | 150 | 15 | 2.5 | 1 | 1 | 5 |
| BZT52C8V2S | 8.2 | 7.7 | 8.7 | 150 | 15 | 3.2 | 1 | 1 | 5 |
| BZT52C9V1S | 9.1 | 8.5 | 9.6 | 100 | 15 | 3.8 | 1 | 1 | 5 |
| BZT52C10S | 10 | 9.4 | 10.6 | 150 | 20 | 4.5 | 1 | 1 | 5 |
| BZT52C11S | 11 | 10.4 | 11.6 | 150 | 20 | 5.4 | 1 | 1 | 5 |
| BZT52C12S | 12 | 11.4 | 12.7 | 150 | 25 | 6 | 1 | 1 | 5 |
| BZT52C13S | 13 | 12.4 | 14.1 | 170 | 30 | 7 | 1 | 1 | 5 |
| BZT52C15S | 15 | 13.8 | 15.6 | 200 | 30 | 8 | 1 | 1 | 5 |
| BZT52C16S | 16 | 15.3 | 17.1 | 200 | 40 | 9 | 1 | 1 | 5 |
| BZT52C18S | 18 | 16.8 | 19.1 | 225 | 45 | 10 | 1 | 1 | 5 |
| BZT52C20S | 20 | 18.8 | 21.2 | 225 | 55 | 11 | 1 | 1 | 5 |
| BZT52C22S | 22 | 20.8 | 23.3 | 250 | 70 | 13 | 1 | 1 | 5 |
| BZT52C24S | 24 | 22.8 | 25.6 | 250 | 80 | 14 | 1 | 1 | 5 |
| BZT52C27S | 27 | 25.1 | 28.9 | 300 | 80 | 16 | 1 | 1 | 5 |
| BZT52C30S | 30 | 28 | 32 | 300 | 80 | 18 | 1 | 1 | 5 |
| BZT52C33S | 33 | 31 | 35 | 325 | 90 | 20 | 1 | 1 | 5 |
| BZT52C36S | 36 | 34 | 38 | 350 | 130 | 22 | 1 | 1 | 5 |
| BZT52C39S | 39 | 37 | 41 | 350 | 130 | 25.3 | 1 | 1 | 5 |
| BZT52C43S | 43 | 40 | 46 | 350 | 130 | 29.4 | 1 | 1 | 5 |
Absolute Maximum Ratings & Characteristics
| Parameter | Symbol | Value | Unit | Note |
| Power Dissipation | PD | 200 | mW | 1 |
| Operating and Storage Temperature Range | Tj, Tstg | -55 ~ +150 | C | |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V | 2 |
| Typical Thermal Resistance Junction to Ambient | RJA | 625 | C/W |
2409301403_Jingdao-Microelectronics-BZT52C12S_C353559.pdf
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