Power N channel MOSFET JingYang TNM01K100MX with pulsed drain current and low RDS ON characteristics
Key Attributes
Model Number:
TNM01K100MX
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
88pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
330pF@50V
Gate Charge(Qg):
5.2nC@10V
Mfr. Part #:
TNM01K100MX
Package:
SOT-223
Product Description
Product Overview
The TNM01K100MX is a high-performance N-channel MOSFET designed for efficient power management. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent package heat dissipation. This MOSFET is ideal for applications in networking, Battery Management Systems (BMS), hand-held electric tools, DC-DC power management, and audio amplifiers.
Product Attributes
- Brand: JY Electronics
- Model: TNM01K100MX
- Type: N-channel MOSFET
- Origin: China (implied by .cn domain)
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||||
| VDSS | Drain-Source Voltage | 100 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | TC = 25 | 3 | A | ||
| ID | Continuous Drain Current | TC = 100 | 2.2 | A | ||
| IDM | Pulsed Drain Current | note1 | 12 | A | ||
| PD | Power Dissipation | TA = 25 | 0.35 | W | ||
| RJA | Thermal Resistance, Junction to Ambient | 357 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (TC=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V,ID=250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS =100V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS =0V,VGS = 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 1.0 | 1.8 | 3.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | note2, VGS =10V, ID =2A | - | 100 | 125 | m |
| RDS(on) | Static Drain-Source on-Resistance | note2, VGS =4.5V, ID =1A | - | 130 | 250 | m |
| gFS | Forward Transconductance | VDS =10V, ID =3A | - | 1.1 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS =50V, VGS = 0V, f = 1.0MHz | - | 330 | - | pF |
| Coss | Output Capacitance | - | 88 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 15 | - | pF | |
| Gate Charge | ||||||
| Qg | Total Gate Charge | VDS =50V, ID =1A, VGS =10V | - | 5.2 | - | nC |
| Qgs | Gate-Source Charge | - | 1.0 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 1.4 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=50V,RL=39, RG=1, VGS =10V | - | 14 | - | ns |
| tr | Turn-on Rise Time | - | 54 | - | ns | |
| td(off) | Turn-off Delay Time | - | 18 | - | ns | |
| tf | Turn-off Fall Time | - | 11 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 3 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 12 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS=1A | - | - | 1.3 | V |
2405091034_JingYang-TNM01K100MX_C6423776.pdf
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