Power MOSFET module featuring Jingdao Microelectronics D7N70 for high voltage switching applications
Key Attributes
Model Number:
D7N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
7A
RDS(on):
1.5Ω@10V,3.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Output Capacitance(Coss):
103pF
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
1.08nF@25V
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
D7N70
Package:
TO-252W
Product Description
Product Overview
The D7N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 700 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 7 | A | Tc=25°C |
| Continuous Drain Current | ID | 4.5 | A | Tc=100°C |
| Pulsed Drain Current | IDM | 28 | A | Note 2 |
| Power Dissipation | PD | 54 | W | Tc=25°C |
| Avalanche Energy Single Pulsed | EAS | 530 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 4 |
| Junction Temperature and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.31 | °C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | ID=250µA, VGS=0V |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=700V, VGS=0V |
| ON CHARACTERISTICS | ||||
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.5 | Ω | VGS=10V, ID=3.5A |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 1080 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 103 | pF | |
| Reverse Transfer Capacitance | CRSS | 13 | pF | |
| Total Gate Charge | QG | 22 | nC | VDS=560V, VGS=10V, ID=7A, IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 7 | nC | |
| Gate-Source Charge | QGS | 12 | nC | |
| Turn-On Delay Time | tD(ON) | 5.5 | ns | VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 20 | ns | |
| Turn-Off Delay Time | tD(OFF) | 74 | ns | |
| Turn-Off Fall Time | tF | 33 | ns | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 7 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 28 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=7A, Note 1 |
| Reverse Recovery Time | trr | 506 | ns | IS=7A, VGS=0V, di/dt=100A/µs |
| Reverse Recovery Charge | Qrr | 2.7 | µC | IS=7A, VGS=0V, di/dt=100A/µs |
2209091800_Jingdao-Microelectronics-D7N70_C5157076.pdf
Related Products
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
