High voltage N channel MOSFET with low gate charge and fast switching Jingdao Microelectronics D4N60
Key Attributes
Model Number:
D4N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
RDS(on):
2.8Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
564pF@25V
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
D4N60
Package:
TO-252W
Product Description
Product Overview
The D4N60 is a high voltage N-channel Power MOSFET designed with advanced trench technology. It offers superior characteristics including fast switching times, low gate charge, low on-state resistance, and high rugged avalanche capabilities. This MOSFET is ideal for high-speed switching applications, commonly found in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V,ID=0.25mA |
| Gate-Source Leakage Current | IGSS | ±10 | nA | VDS=0V,VGS=±30V |
| Drain-Source Leakage Current | IDSS | 2.5 | µA | VDS=600V,VGS=0V |
| ON CHARACTERISTICS | ||||
| Static Drain-Source On-State Resistance | RDS(ON) | ≤ 2.8 | Ω | VGS=10V,ID=2.0A |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250µA |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 564 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 66 | pF | |
| Reverse Transfer Capacitance | CRSS | 12 | pF | |
| Total Gate Charge | QG | 13 | nC | VDS=480V,VGS=10V, ID=4A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 4.0 | nC | |
| Gate-Source Charge | QGS | 7.0 | nC | |
| SWITCHING CHARACTERISTICS | ||||
| Turn-On Delay Time | tD(ON) | 36 | ns | VDS=100V,VGS=10V, ID=4A,RG=2.8Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 16 | ns | |
| Turn-Off Delay Time | tD(OFF) | 22 | ns | |
| Turn-Off Fall Time | tF | 4.0 | ns | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 4 | A | T=25°C |
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=4A,VGS=0V |
| Reverse Recovery Time | trr | 250 | ns | IS=4A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 4.5 | µC | IS=4A,VGS=0V, di/dt=100A/us |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 4.0 (Tc=25°C), 2.5 (Tc=100°C) | A | |
| Pulsed Drain Current | IDM | 32 | A | (Note 2) |
| Power Dissipation | PD | 173 | W | (Tc=25°C) |
| Avalanche Energy Single Pulsed | EAS | 32 | mJ | (Note 3) |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | (Note 4) |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.31 | °C/W | |
2203301630_Jingdao-Microelectronics-D4N60_C2981741.pdf
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