Plastic Encapsulate Rectifier Diode JSCJ ES3B Suitable for High Surge Current Applications
Key Attributes
Model Number:
ES3B
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
10uA@100V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
950mV@3A
Current - Rectified:
3A
Mfr. Part #:
ES3B
Package:
SMCG
Product Description
Product Overview
The ES3A through ES3J series are SMCG plastic-encapsulate diodes designed for high surge current capability. They function as rectifiers and are suitable for various applications requiring efficient power handling.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: Color band denotes cathode
- Material: Plastic-Encapsulate
Technical Specifications
| Item | Symbol | Unit | Test Conditions | ES3A | ES3B | ES3C | ES3D | ES3G | ES3H | ES3J |
| Maximum RMS Voltage | VRRM | V | 50 | 100 | 150 | 200 | 400 | 500 | 600 | |
| Repetitive Peak Reverse Voltage | V RMS | 35 | 70 | 105 | 140 | 280 | 350 | 420 | ||
| Average Forward Current | IF(AV) | A | 60Hz Half-sine wave Resistance load T=100 | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 |
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave 1 cycleTa=25 | 50 | 100 | 150 | 200 | 400 | 500 | 600 |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | ||
| Maximum DC Blocking Voltage | V DC | V | 50 | 100 | 150 | 200 | 400 | 500 | 600 | |
| Peak Forward Voltage | VF | V | IF=3.0A, T=25 | 1.25 | 1.25 | 1.25 | 1.25 | 1.25 | 1.25 | 1.25 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta =25 | 10 | 10 | 10 | 10 | 10 | 10 | 10 |
| Peak Reverse Current | IRRM2 | A | VRM=VRRM, Ta =100 | 500 | 500 | 500 | 500 | 500 | 500 | 500 |
| Maximum reverse recovery time | trr | ns | IF=0.5A,IR=1.0A,Irr=0.25A | 35 | 35 | 35 | 35 | 35 | 35 | 35 |
| Typical junction capacitance | CJ | pF | Measured at 1MHz and applied reverse voltage of 4.0V D.C. | 80 | 80 | 80 | 80 | 80 | 80 | 80 |
2410121810_JSCJ-ES3B_C5293696.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
