Small surface mount Schottky diode JSCJ DS751-40LED02 for detection in portable electronic equipment
Key Attributes
Model Number:
DS751-40LED02
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150mA
Reverse Leakage Current (Ir):
500nA@30V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
DS751-40LED02
Package:
WBFBP-02C
Product Description
Product Overview
The DS751-40LED02 is a silicon epitaxial planar Schottky barrier diode designed for high-speed switching applications, particularly for detection in portable equipment such as mobile phones, MP3 players, CD-ROMs, DVD-ROMs, and notebook PCs. It features a small surface mounting type, low reverse current, low forward voltage, and high reliability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: DS751-40LED02
- Marking: 5
- Package Type: DFN/FBP(1.0X0.6)
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Peak reverse voltage | VRM | 40 | V | |||
| DC reverse voltage | VR | 30 | V | |||
| Mean rectifying current | IO | @Ta=25 | 30 | mA | ||
| Non-repetitive Peak forward surge Current | IFSM | @t=8.3ms | 150 | mA | ||
| Forward voltage | VF | IF=1mA | 0.37 | V | ||
| Reverse current | IR | VR=30V | 0.5 | A | ||
| Capacitance between terminals | CT | VR=1V,f=1MHZ | 2 | pF | ||
| Operating Junction Temperature Range | Tj | -40 | +125 | |||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Thermal Resistance Junction to Ambient | RJA | 1000 | /W | |||
| Power dissipation | PD | @Ta=25 | 100 | mW |
2410010102_JSCJ-DS751-40LED02_C2991948.pdf
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