Digital transistor package JSCJ UMD6N featuring dual NPN and PNP transistors for circuit integration
UMD6N Dual Digital Transistors (NPN+PNP)
The UMD6N is a digital transistor package integrating DTA143T (PNP) and DTC143T (NPN) transistor elements. These independent transistor elements eliminate interference, offering a significant reduction in mounting cost and area by half. This component is designed for digital applications where integrated transistors with built-in resistors are required.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: UMD6N
- Marking: D6
- Package Type: SOT-363
- Transistor Types: DTA143T (PNP), DTC143T (NPN)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Collector-base voltage | V(BR)CBO | 50 | V | |||
| Collector-emitter voltage | V(BR)CEO | 50 | V | |||
| Emitter-base voltage | V(BR)EBO | 5 | V | |||
| Collector current | IC | 100 | mA | |||
| Collector Power dissipation | PC | 150 | mW | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | |||
| Electrical Characteristics (Ta=25) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=50A | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=50A | 5 | V | ||
| Collector cut-off current | ICBO | VCB=50V | 0.5 | A | ||
| Emitter cut-off current | IEBO | VEB=4V | 0.5 | A | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=5mA,IB=0.25mA | 0.3 | V | ||
| DC current transfer ratio | hFE | VCE=5V,IC=1mA | 100 | 600 | ||
| Input resistance | R1 | 3.29 | 4.7 | 6.11 | K | |
| Transition frequency | fT | VCE=10V ,IE=-5mA,f=100MHz | 250 | MHz | ||
2410121714_JSCJ-UMD6N_C2910252.pdf
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