Digital transistor package JSCJ UMD6N featuring dual NPN and PNP transistors for circuit integration

Key Attributes
Model Number: UMD6N
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
6.11kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMD6N
Package:
SOT-363
Product Description

UMD6N Dual Digital Transistors (NPN+PNP)

The UMD6N is a digital transistor package integrating DTA143T (PNP) and DTC143T (NPN) transistor elements. These independent transistor elements eliminate interference, offering a significant reduction in mounting cost and area by half. This component is designed for digital applications where integrated transistors with built-in resistors are required.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Product Code: UMD6N
  • Marking: D6
  • Package Type: SOT-363
  • Transistor Types: DTA143T (PNP), DTC143T (NPN)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta=25)
Collector-base voltage V(BR)CBO 50 V
Collector-emitter voltage V(BR)CEO 50 V
Emitter-base voltage V(BR)EBO 5 V
Collector current IC 100 mA
Collector Power dissipation PC 150 mW
Operation Junction and Storage Temperature Range TJ,Tstg -55 150
Electrical Characteristics (Ta=25)
Collector-base breakdown voltage V(BR)CBO IC=50A 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA 50 V
Emitter-base breakdown voltage V(BR)EBO IE=50A 5 V
Collector cut-off current ICBO VCB=50V 0.5 A
Emitter cut-off current IEBO VEB=4V 0.5 A
Collector-emitter saturation voltage VCE(sat) IC=5mA,IB=0.25mA 0.3 V
DC current transfer ratio hFE VCE=5V,IC=1mA 100 600
Input resistance R1 3.29 4.7 6.11 K
Transition frequency fT VCE=10V ,IE=-5mA,f=100MHz 250 MHz

2410121714_JSCJ-UMD6N_C2910252.pdf

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