Battery Protection MOSFET JingYang JY6310X N channel Device with 60V VDS and Low On Resistance Values
Key Attributes
Model Number:
JY6310X
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
115mΩ@4.5V,1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
20pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
250pF@30V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
7nC@30V
Mfr. Part #:
JY6310X
Package:
SOT-23
Product Description
Product Overview
The JY6310X is an N-channel Enhancement MOSFET designed for high power and current handling capabilities. It features a VDS of 60V and an ID of 3A, with low on-resistance values of less than 100m at VGS = 10V and less than 115m at VGS = 4.5V. This lead-free product is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: JY Electronics
- Product Type: N-channel Enhancement MOSFET
- Package: SOT-23
- Certifications: Lead Free Product Acquired
- Origin: www.jy-electronics.com.cn
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||||
| VDSS | Drain-Source Voltage | 60 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | TC = 25 | 3 | A | ||
| TC = 100 | 2 | A | ||||
| IDM | Pulsed Drain Current | note1 | 10 | A | ||
| PD | Power Dissipation | TA = 25 | 0.35 | W | ||
| TC = 25 | (See Figure 9) | W | ||||
| RJA | Thermal Resistance, Junction to Ambient | 357 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Features | ||||||
| VDS=60V, ID=3A, RDS(ON) <100m @ VGS =10V, RDS(ON) <115m @ VGS =4.5V, High Power and Current Handling Capability, Lead Free Product, Surface Mount Package | ||||||
| Application | ||||||
| Battery Protection, Load Switch, Power Management | ||||||
| Electrical Characteristics (TC=25 unless otherwise specified) | ||||||
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V,ID= 250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS =60V, VGS = 0V | - | - | 1 | A |
| IGSS | Gate to Body Leakage Current | VDS =0V, VGS = 20V | - | - | 100 | nA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= 250A | 1.0 | - | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS =10V, ID =2A | - | - | 100 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS =4.5V, ID =1A | - | - | 115 | m |
| Dynamic Characteristic | ||||||
| Ciss | Input Capacitance | VDS = 30V, VGS = 0V, f = 1.0MHz | - | 250 | - | pF |
| Coss | Output Capacitance | VDS = 30V, VGS = 0V, f = 1.0MHz | - | 26 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS = 30V, VGS = 0V, f = 1.0MHz | - | 20 | - | pF |
| Qg | Total Gate Charge | VDS = 30V, ID = 3A, VGS = 4.5V | - | 7 | - | nC |
| Qgs | Gate-Source Charge | VDS = 30V, ID = 3A, VGS = 4.5V | - | 1.2 | - | nC |
| Qgd | Gate-Drain(Miller) Charge | VDS = 30V, ID = 3A, VGS = 4.5V | - | 1.5 | - | nC |
| Switching Characteristic | ||||||
| td(on) | Turn-on Delay Time | VDD = 30V, ID =1.5A, RGEN=1, VGS=10V | - | 6.5 | - | ns |
| tr | Turn-on Rise Time | VDD = 30V, ID =1.5A, RGEN=1, VGS=10V | - | 15.2 | - | ns |
| td(off) | Turn-off Delay Time | VDD = 30V, ID =1.5A, RGEN=1, VGS=10V | - | 15.2 | - | ns |
| tf | Turn-off Fall Time | VDD = 30V, ID =1.5A, RGEN=1, VGS=10V | - | 10.3 | - | ns |
| Drain-Source Diode Characteristic and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 3 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 10 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS =1A | - | - | 1.2 | V |
2405091034_JingYang-JY6310X_C5156710.pdf
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