Low On Resistance N Channel MOSFET JingYang BSS123X for Switching and Electronic Device Applications
Key Attributes
Model Number:
BSS123X
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
60pF
Gate Charge(Qg):
2nC@10V
Mfr. Part #:
BSS123X
Package:
SOT-23
Product Description
BSS123X N-Channel MOSFET
The BSS123X is an N-Channel MOSFET designed for switching applications. It features a low RDS(on) and is operated at low logic level gate drive, making it suitable for various electronic circuits. This surface mount package device offers efficient performance with key parameters like VDS=100V and ID=0.17A.
Product Attributes
- Brand: JY Electronics
- Origin: China
- Model: BSS123X
- Marking: BSS123 or B123
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 100 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Continuous Drain Current (ID) | TC = 25 | 0.17 | A | ||
| Continuous Drain Current (ID) | TC = 100 | 0.11 | A | ||
| Pulsed Drain Current (IDM) | note1 | 0.68 | A | ||
| Power Dissipation (PD) | TA = 25 | 0.35 | W | ||
| Thermal Resistance, Junction to Ambient (RJA) | 357 | /W | |||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | +150 | |||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID= 250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS =80V, VGS = 0V | - | - | 1 | µA |
| Gate to Body Leakage Current (IGSS) | VDS =0V, VGS = ±20V | - | - | ±10 | µA |
| Gate Threshold Voltage (VGS(th)) | VDS= VGS, ID= 250µA | 1.5 | - | 2.5 | V |
| Static Drain-Source on-Resistance (RDS(on)) | VGS =10V, ID =0.25A, note2 | - | - | 6 | Ω |
| Static Drain-Source on-Resistance (RDS(on)) | VGS =4.5V, ID =0.2A, note2 | - | - | 9 | Ω |
| Input Capacitance (Ciss) | VDS =25V, VGS =0V, f = 1.0MHz | - | - | 60 | pF |
| Output Capacitance (Coss) | - | - | 15 | pF | |
| Reverse Transfer Capacitance (Crss) | - | - | 6 | pF | |
| Total Gate Charge (Qg) | VDS =10V, ID =0.22A, VGS =10V | - | - | 2 | nC |
| Gate-Source Charge (Qgs) | - | - | 0.25 | nC | |
| Gate-Drain(Miller) Charge (Qgd) | - | - | 0.4 | nC | |
| Turn-on Delay Time (td(on)) | VDD =30V, ID =0.28A, RGEN=50Ω, VGS=10V | - | - | 8 | ns |
| Turn-on Rise Time (tr) | - | - | 8 | ns | |
| Turn-off Delay Time (td(off)) | - | - | 13 | ns | |
| Turn-off Fall Time (tf) | - | - | 6 | ns | |
| Drain-Source Diode Characteristics | |||||
| Maximum Continuous Drain to Source Diode Forward Current (IS) | - | - | 0.17 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current (ISM) | - | - | 0.68 | A | |
| Drain to Source Diode Forward Voltage (VSD) | VGS =0V, IS =0.4A | - | - | 1.3 | V |
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
2405091034_JingYang-BSS123X_C6423743.pdf
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