Low leakage diode with 200 volt DC blocking voltage JSCJ MMBD1503A SOT23 plastic encapsulated device

Key Attributes
Model Number: MMBD1503A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
10nA@180V
Reverse Recovery Time (trr):
-
Operating Junction Temperature Range:
-
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
200V
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.5V@300mA
Current - Rectified:
200mA
Mfr. Part #:
MMBD1503A
Package:
SOT-23
Product Description

Product Overview

This document details the MMBD1503A diode, a SOT-23 plastic-encapsulated device from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It features low leakage and high conductance, making it suitable for various electronic applications. The diode offers a DC blocking voltage of up to 200V and a continuous forward current of 200mA.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Package Type: SOT-23
  • Marking: A13

Technical Specifications

SymbolParameterValueUnitTest Conditions
VRDC Blocking Voltage200VTa=25 unless otherwise noted
IOContinuous Forward Current200mATa=25 unless otherwise noted
IFMPeak Forward Current700mATa=25 unless otherwise noted
IFSMNon-repetitive Peak Forward Surge Current @t=8.3msATa=25 unless otherwise noted
PDPower Dissipation350mWTa=25 unless otherwise noted
RJAThermal Resistance from Junction to Ambient357/WTa=25 unless otherwise noted
TjJunction Temperature150Ta=25 unless otherwise noted
TstgStorage Temperature-55~+150Ta=25 unless otherwise noted
V(BR)Reverse voltage200VIR=5A
IRReverse current10nAVR=180V
VFForward voltage0.75VIF=1mA
0.85VIF=10mA
0.95VIF=50mA
1.1VIF=100mA
1.3VIF=200mA
VFForward voltage1.5VIF=300mA
CtotTotal capacitance4pFVR=0V,f=1MHz

2410121448_JSCJ-MMBD1503A_C69005.pdf

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