Schottky barrier diode array JSCJ BAS40DW-04 optimized for rectification and fast switching circuits
Key Attributes
Model Number:
BAS40DW-04
Product Custom Attributes
Reverse Leakage Current (Ir):
200nA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40DW-04
Package:
SOT-363
Product Description
Product Overview
The BAS40TW/DW series are Schottky barrier diode arrays designed for low forward voltage drop and fast switching characteristics. They are suitable for various electronic applications requiring efficient rectification and signal processing.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Origin: Not specified
- Material: Plastic-Encapsulate Diodes
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Reverse breakdown voltage | V(BR) | IR= 10A | 40 | V | |
| Reverse voltage leakage current | IR | VR=30V | 200 | nA | |
| Forward voltage | VF | IF=1mA | 380 | mV | |
| IF=40mA | 1000 | ||||
| IF=1mA (Ta=100) | |||||
| IF=40mA (Ta=100) | |||||
| Total capacitance | CT | VR=0,f=1MHz | 5 | pF | |
| Reverse recovery time | trr | IF= IR=10mA, Irr=0.1IR,RL=100 | 5 | nS | |
| Average Rectified Output Current | IO | 200 | mA | ||
| Power Dissipation | Pd | 200 | mW | ||
| Thermal Resistance | RJA | Junction to Ambient Air | 500 | /W | |
| Operating Junction Temperature Range | TJ | -40 | +125 | ||
| Storage Temperature Range | TSTG | -55 | +150 | ||
| DC Blocking Voltage | VR | 40 | V | ||
| Non-Repetitive Peak reverse voltage | VRM | 40 | V |
2410121931_JSCJ-BAS40DW-04_C3031890.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
