High side load switching P Channel MOSFET JSCJ CJ2101 with plastic encapsulate and SOT 323 package
Key Attributes
Model Number:
CJ2101
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-50℃~+150℃
RDS(on):
210mΩ@1.8V,0.3A
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
82pF
Number:
1 P-Channel
Input Capacitance(Ciss):
640pF
Pd - Power Dissipation:
290mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ2101
Package:
SOT-323
Product Description
Product Overview
The CJ2101 is a P-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, featuring leading trench technology for low RDS(on). This design contributes to extending battery life in various applications. It is ideal for high-side load switching, charging circuits, and single-cell battery applications found in devices such as cell phones, digital cameras, and PDAs.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: CJ2101
- Material: Plastic-Encapsulate
- Package: SOT-323
- Origin: China (implied by manufacturer location)
- Website: www.cj-elec.com
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8.0 | V | |||
| Continuous Drain Current | ID | (Ta=25) | -1.4 | A | ||
| Pulsed Drain Current | IDM | (tp=10µs) | -3.0 | A | ||
| Power Dissipation | PD | (Ta=25) | 0.29 | W | ||
| Thermal Resistance Junction to Ambient | RθJA | 431 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | Tstg | -50 | +150 | °C | ||
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | VDSS | VGS = 0V, ID =-250µA | -20 | V | ||
| Gate-Source Leakage | IGSS | VDS =0V, VGS =±8V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS =0V | -1.0 | µA | ||
| ON CHARACTERISTICS | ||||||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.45 | -0.7 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-1.0A | 100 | mΩ | ||
| VGS =-2.5V, ID =-0.5A | 140 | mΩ | ||||
| VGS =-1.8V, ID =-0.3A | 210 | mΩ | ||||
| CHARGES AND CAPACITANCES | ||||||
| Input Capacitance | Ciss | (VDS =-8.0V,VGS =0V,f =1MHz) | 640 | pF | ||
| Output Capacitance | Coss | 120 | pF | |||
| Reverse Transfer Capacitance | Crss | 82 | pF | |||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(on) | (VGS=-4.5V,VDD=-4.0V, ID =-1.0A,RG=6.2Ω) | 6.2 | ns | ||
| Rise Time | tr | 15 | ns | |||
| Turn-Off Delay Time | td(off) | 26 | ns | |||
| Fall Time | tf | 18 | ns | |||
| Drain-source Body diode characteristics | ||||||
| Forward Diode Voltage | VSD | VGS =0V,IS=-0.3A | -0.62 | -1.2 | V | |
2410121609_JSCJ-CJ2101_C52641.pdf
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