Low Profile P Channel MOSFET JSCJ CJMPD08 Ideal for Portable Equipment and Load Switching Applications
Key Attributes
Model Number:
CJMPD08
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 P-Channel
Input Capacitance(Ciss):
480pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
CJMPD08
Package:
DFNWB-6L-A(2x2)
Product Description
Product Overview
The CJMPD08 is a P-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(on) and low gate charge. Its low profile design is ideal for thin environments, and it supports bidirectional current flow with a common source configuration. This MOSFET is optimized for battery and load management applications in portable equipment, including Li-Ion battery charging, protection circuits, and high-side load switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJMPD08
- Package: DFNWB2X2-6L-A
- Marking: CJMPD08
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -12 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1 | V | |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-12V, VGS =0V | -1 | A | ||
| Forward Transconductance | gFS | VDS =-10V, ID =-2.7A | 5.5 | S | ||
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-3.6A | 60 | m | ||
| VGS =-2.5V, ID =-3A | 80 | m | ||||
| VGS =-1.8V, ID =-2A | 110 | m | ||||
| Input Capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 480 | pF | ||
| Output Capacitance | Coss | 35 | ||||
| Reverse Transfer Capacitance | Crss | 48 | ||||
| Total Gate Charge | Qg | VDS =-4.5V,VGS =-6V,ID =-2.8A | 7.2 | nC | ||
| Gate-Source Charge | Qgs | 2.2 | ||||
| Gate-Drain Charge | Qg | 1.2 | ||||
| Turn-on Delay Time | td(on) | VDS=-6V,ID=-2.8A, VGS=-4.5V,RG=6 | 38 | ns | ||
| Rise Time | tr | 25 | ||||
| Turn-off Delay Time | td(off) | 43 | ||||
| Fall Time | tf | 65 | ||||
| Forward On Voltage | VSD | VGS =0V, IS=-1A | -0.8 | V |
2410121655_JSCJ-CJMPD08_C504175.pdf
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