Low Gate Voltage P Channel Power MOSFET JSCJ CJMP2011 with Superior Drain Source On State Resistance
Key Attributes
Model Number:
CJMP2011
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
11A
RDS(on):
15mΩ@4.5V;22mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
590pF
Number:
1 P-Channel
Output Capacitance(Coss):
680pF
Input Capacitance(Ciss):
2.7nF
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
35nC
Mfr. Part #:
CJMP2011
Package:
DFNWB2x2-6L
Product Description
Product Overview
The CJMP2011 is a P-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(on), low gate charge, and operates with a low gate voltage. This device is ideal for load switching applications and various other uses including PWM applications, load switching, and battery charging in cellular handsets.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJMP2011
- Package: DFNWB2*2-6L-J
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =12V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.45 | -0.85 | -1.2 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-7.2A | 15 | 23.5 | m | |
| VGS =-2.5V, ID =-6.4A | 22 | 40 | ||||
| Forward Transconductance | gFS | VDS =-10V, ID =-7.2A | 16 | S | ||
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 2700 | pF | ||
| Output Capacitance | Coss | 680 | ||||
| Reverse Transfer Capacitance | Crss | 590 | ||||
| Total Gate Charge | Qg | VDS =-6V,VGS =-4.5V,ID =-10A | 35 | 48 | nC | |
| Gate-Source Charge | Qgs | 5 | ||||
| Gate-Drain Charge | Qgd | 10 | nC | |||
| Drain-Source Diode Forward Current | IS | -11 | A | |||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V, ISD=-1.9A | -1.2 | V | ||
| Turn-on delay time | td(on) | VGEN=-4.5V,VDD=-10V, ID=-1A,Rg=10 | 11 | ns | ||
| Turn-on rise time | tr | 35 | ns | |||
| Turn-off delay time | td(off) | 30 | ns | |||
| Turn-off fall time | tf | 10 | ns |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | -20 | V |
| Gate-Source Voltage | VGS | 12 | V |
| Drain Current-Continuous | ID | -11 | A |
| Drain Current-Pulsed | IDM | -44 | A |
| Power Dissipation | PD | 0.75 | W |
| Thermal Resistance from Junction to Ambient | RJA | 167 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | TSTG | -55 ~+150 |
2410121917_JSCJ-CJMP2011_C504123.pdf
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