power management component JSCJ CJL8810 dual n channel MOSFET designed for load switching and protection
Key Attributes
Model Number:
CJL8810
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@1.8V,7A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
145pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.15nF@10V
Pd - Power Dissipation:
714mW
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
CJL8810
Package:
SOT-23-6L
Product Description
Product Overview
The CJL8810 is a Dual N-Channel MOSFET utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration. This device is ideal for applications requiring efficient load switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: L8810
- Package: SOT-23-6L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =4.5V, VDS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 5 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =3A | 20 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | 22 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =3.8V, ID =3A | 24 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3A | 26 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =1.8V, ID =3A | 35 | m | ||
| Forward tranconductance | gFS | VDS =5V, ID =7A | 9 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 1150 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 185 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 145 | pF | ||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =7A | 15 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =7A | 0.8 | nC | ||
| Gate-drain charge | Qg d | VDS =10V,VGS =4.5V,ID =7A | 3.2 | nC | ||
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 6 | ns | ||
| Turn-on rise time | tr | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 13 | ns | ||
| Turn-off delay time | td(off) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 52 | ns | ||
| Turn-off fall time | tf | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 16 | ns | ||
| Continuous Drain Current | ID | Ta=25 | 7 | A | ||
| Pulsed Drain Current | IDM | Ta=25 | 30 | A | ||
| Power Dissipation | PD | Ta=25, mounted on 1 in2 FR-4 board | 714 | mW | ||
| Thermal Resistance from Junction to Ambient | RJA | Ta=25, mounted on 1 in2 FR-4 board | 175 | /W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | 260 |
2410121917_JSCJ-CJL8810_C504153.pdf
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