Power MOSFET JSCJ CJAB55N03 N Channel Device Featuring Low Gate Charge and Excellent Heat Dissipation
Key Attributes
Model Number:
CJAB55N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
379pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.405nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
CJAB55N03
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB55N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply systems. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for good heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJAB55N03
- Origin: CHINA (implied by manufacturer name)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 55 | A | |||
| Pulsed Drain Current | IDM | 220 | A | |||
| Maximum Power Dissipation | PD | 1.5 | W | |||
| Single Pulsed Avalanche Energy | EAS | 420 | mJ | |||
| Junction Temperature | TJ | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | |||
| Off characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.5 | V | ||
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 5.5 | mΩ | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =20A | 9.5 | mΩ | ||
| Forward transconductance | gFS | VDS =10V, ID =20A | 55 | S | ||
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =100KHz | 1850 | pF | ||
| Output capacitance | Coss | 320 | pF | |||
| Reverse transfer capacitance | Crss | 291 | pF | |||
| Switching characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=25V, ID=14A | 47 | nC | ||
| Gate-source charge | Qgs | 3.9 | nC | |||
| Gate-drain charge | Qg | 16 | nC | |||
| Turn-on delay time | td(on) | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 12 | ns | ||
| Turn-on rise time | tr | 36 | ns | |||
| Turn-off delay time | td(off) | 49 | ns | |||
| Turn-off fall time | tf | 12 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 55 | A | |||
| Pulsed drain-source diode forward current | ISM | 220 | A | |||
2410121917_JSCJ-CJAB55N03_C504074.pdf
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