N Channel Power MOSFET JSCJ CJAC150N03 Offering Low RDS ON and Suitable for High Frequency Circuits
Key Attributes
Model Number:
CJAC150N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.1mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
600pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.4nF@15V
Pd - Power Dissipation:
130W
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
CJAC150N03
Package:
PDFNWB-8L-EP(5x6)
Product Description
Product Overview
The CJAC150N03, manufactured by JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, SMPS, general-purpose applications, hard switched and high-frequency circuits, and Uninterruptible Power Supplies. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for good heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Part Number: CJAC150N03
- Package Type: PDFNWB5x6-8L
- Channel Type: N-Channel
- Marking: CJAC150N03
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.2 | 1.6 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =30A | 1.6 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =15A | 2.1 | m | ||
| Forward transconductance | gFS | VDS =10V, ID =2A | 17 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 5400 | pF | ||
| Output capacitance | Coss | |||||
| Reverse transfer capacitance | Crss | |||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=4.5V, VDS=15V, ID=24A | 60 | nC | ||
| Gate-source charge | Qgs | |||||
| Gate-drain charge | Qg | |||||
| Turn-on delay time | td(on) | VDS=15V,RL=0.75, VGS=10V,RG=1 | 20 | ns | ||
| Turn-on rise time | tr | |||||
| Turn-off delay time | td(off) | |||||
| Turn-off fall time | tf | |||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.0 | V | ||
| Continuous drain-source diode forward current | IS | 150 | A | |||
| Pulsed drain-source diode forward current | ISM | 600 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 150 | A | |||
| Pulsed Drain Current | IDM | 600 | A | |||
| Single Pulsed Avalanche Energy | EAS | 280 | mJ | |||
| Power Dissipation | PD | Ta=25 | 130 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Thermal Resistance Junction to Ambient | RJA | FR-4 board, 2oz. Copper, still air | 62.5 | /W | ||
| Thermal Resistance Junction to Case | RJC | 0.96 | /W | |||
2411121115_JSCJ-CJAC150N03_C504084.pdf
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