Low Gate Charge N Channel Power MOSFET JSCJ CJAC10H02 Designed for General Purpose and Power Switching Circuits
Key Attributes
Model Number:
CJAC10H02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
5nF@10V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
CJAC10H02
Package:
PDFNWB-8L-EP(5x6)
Product Description
Product Overview
The CJAC10H02 is an N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including SMPS, general purpose, hard switched and high frequency circuits, power switching, and uninterruptible power supplies. Key features include high density cell design for ultra low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, excellent heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC10H02
- Package Type: PDFNWB5x6-8L
- Marking: CJAC10H02
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =12V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 0.7 | 1.2 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =20A | 1.5 | 2.0 | m | |
| VGS =2.5V, ID =15A | 2.0 | 2.4 | m | |||
| Forward transconductance | gFS | VDS =5V, ID =20A | 93 | S | ||
| Input capacitance | Ciss | VDS =10V,VGS =0V, f =1MHz | 5000 | pF | ||
| Output capacitance | Coss | 1200 | ||||
| Reverse transfer capacitance | Crss | 900 | ||||
| Total gate charge | Qg | VDS=10V, VGS=10V, ID=20A | 70 | nC | ||
| Gate-source charge | Qgs | 16 | ||||
| Gate-drain charge | Qg | 20 | ||||
| Turn-on delay time | td(on) | VDD=10V, ID=2A,RL=15 VGS=10V,RG=2.5 | 12 | ns | ||
| Turn-on rise time | tr | 13 | ||||
| Turn-off delay time | td(off) | 45 | ||||
| Turn-off fall time | tf | 32 | ||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 100 | A | |||
| Pulsed drain-source diode forward current | ISM | 400 | A | |||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 10 | A | |||
| Pulsed Drain Current | IDM | 40 | A | |||
| Single Pulsed Avalanche Energy | EAS (1) | VDD=15V,L=0.5mH, RG=25, Starting TJ = 25C | 240 | mJ | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | ~ | +150 | ||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 |
2411121115_JSCJ-CJAC10H02_C504078.pdf
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