Low gate leakage P Channel Power MOSFET JSCJ CJQ4435 suitable for notebook CPU core power conversion
Key Attributes
Model Number:
CJQ4435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9.1A
Operating Temperature -:
-
RDS(on):
35mΩ@4.5V,6.9A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
185pF
Number:
1 P-Channel
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
CJQ4435
Package:
SOP-8
Product Description
Product Description
The CJQ4435 is a P-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology to deliver excellent RDS(on), shoot-through immunity, superior body diode characteristics, and ultra-low gate resistance. This device is ideal for low-side switching applications in Notebook CPU core power conversion. Key applications include Battery Switches and Load Switches.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJQ4435
- Package Type: SOP8
- Material: Plastic-Encapsulate
- Color: Green molding compound device (if indicated by solid dot)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-30V, VGS =0V | -1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.5 | -3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-9.1A | 14 | 24 | m | |
| VGS =-4.5V, ID =-6.9A | 23 | 35 | m | |||
| Forward transconductance | gFS | VDS =-10V, ID =-9.1A | 20 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 1350 | pF | ||
| Coss | 215 | |||||
| Crss | 185 | |||||
| Switching Characteristics (note 2) | ||||||
| Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-9.1A | 50 | nC | ||
| Qgs | 25 | |||||
| Qgd | 4 | |||||
| VDS=-15V, VGS=-4.5V, ID=-9.1A | 7.5 | |||||
| Switching Times | td(on) | VDD=-15V,ID=-1A, VGS=-10V,RG=1, RL=15 | 15 | ns | ||
| tr | 15 | |||||
| td(off) | 70 | |||||
| tf | 25 | |||||
| Gate Resistance | Rg | f =1MHz, VDS=0V, VGS=0V | 5.8 | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-2A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -9.1 | A | |||
| Pulsed drain-source diode forward current | ISM | -36 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Ta=25 | -9.1 | A | ||
| Pulsed Drain Current | IDM | -36 | A | |||
| Single Pulsed Avalanche Energy | EAS (1) | 20 | mJ | |||
| Power Dissipation | PD | Ta=25 | 1.4 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 89 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering | TL | (1/8 from case for 10s) | 260 | |||
2410121243_JSCJ-CJQ4435_C114076.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
