Durable JSCJ MCF600N120S2E3 IGBT module ideal for motor drivers solar inverters and UPS applications
Key Attributes
Model Number:
MCF600N120S2E3
Product Custom Attributes
Pd - Power Dissipation:
3.95kW
Td(off):
625ns
Td(on):
435ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
1.47nF
Input Capacitance(Cies):
128nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@23mA
Gate Charge(Qg):
7.4uC
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
1200A
Switching Energy(Eoff):
35mJ
Turn-On Energy (Eon):
55mJ
Mfr. Part #:
MCF600N120S2E3
Package:
E3
Product Description
Product Overview
The JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD MCF600N120S2E3 module features advanced Trench and FS (Field Stop) IGBT technology, offering very low Collector-Emitter Saturation Voltage. It is designed for ease of use in drives and inverters, providing high reliability, high short circuit capability, and low switching loss. Applications include Solar Inverters, Uninterrupted Power Supplies, Servo Drivers, and Motor Drivers.
Product Attributes
- Brand: JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: MCF600N120S2E3
- Origin: China
- Package Marking: E3
Technical Specifications
| Parameter | Symbol | Condition | Value | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | 1200 | V | |
| Gate-Emitter Voltage | VGES | ±20 | V | |
| DC Collector Current | IC | Tc=100 | 600 | A |
| Peak Collector Current | ICM | tp=1ms | 1200 | A |
| Continuous Diode Forward Current | IF | 600 | A | |
| Diode Peak Forward Current | IFRM | tp=1ms | 1200 | A |
| IGBT Maximum Power Dissipation | PD | 3950 | W | |
| IGBT Short Circuit Withstand Time | tsc | 10 | μs | |
| Maximum Junction Temperature | TvJ MAX | 175 | ||
| Operating Junction Temperature | TvJ | -40 to 150 | ||
| Storage Temperature | TSTG | -40 to 125 | ||
| Maximum lead temperature for soldering | TL | 260 | ||
| Electrical Characteristics | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=600A, Tvj=25 | 1.75 - 2.15 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=600A, Tvj=125 | 2.20 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=600A, Tvj=150 | 2.25 | V |
| Gate-Emitter Threshold Voltage | VGE(th) | IC=23mA, VCE=VGE | 5.20 - 6.40 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V, VGE=0V | 1 | mA |
| Gate-Emitter Leakage Current | IGES | VCE=0V, VGE=±20V | -100 - 100 | nA |
| Internal Gate Resistance | RGint | Tvj=25 | 1.20 | Ω |
| Gate Charge | QG | VGE=-15V~+15V | 7.4 | μC |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz | 128 | nF |
| Reverse Transfer Capacitance | Cres | 1.47 | nF | |
| Turn-on Delay Time | td(on) | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=25 | 435 | ns |
| Turn-on Delay Time | td(on) | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=125 | 450 | ns |
| Turn-on Delay Time | td(on) | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=150 | 450 | ns |
| Rise Time | tr | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=25 | 115 | ns |
| Rise Time | tr | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=125 | 160 | ns |
| Rise Time | tr | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=150 | 170 | ns |
| Turn-off Delay Time | td(off) | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=25 | 625 | ns |
| Turn-off Delay Time | td(off) | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=125 | 680 | ns |
| Turn-off Delay Time | td(off) | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=150 | 700 | ns |
| Fall Time | tf | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=25 | 90 | ns |
| Fall Time | tf | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=125 | 200 | ns |
| Fall Time | tf | IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=150 | 235 | ns |
| Turn-on Energy Loss | Eon | IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=25 | 55 | mJ |
| Turn-on Energy Loss | Eon | IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=125 | 100 | mJ |
| Turn-on Energy Loss | Eon | IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=150 | 110 | mJ |
| Turn-off Energy Loss | Eoff | IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=25 | 35 | mJ |
| Turn-off Energy Loss | Eoff | IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=125 | 50 | mJ |
| Turn-off Energy Loss | Eoff | IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=150 | 60 | mJ |
| Short Circuit Current | ISC | VGE≤15V, tp≤10us, VCC=800V, Tvj=150 | 2650 | A |
| Diode Electrical Characteristics | ||||
| Forward Voltage | VF | IF=600A, Tvj=25 | 1.75 - 2.15 | V |
| Forward Voltage | VF | IF=600A, Tvj=125 | 1.90 | V |
| Forward Voltage | VF | IF=600A, Tvj=150 | 1.90 | V |
| Reverse Recovery Current | Irr | IF=600A, VR=600V, VGE=-15V, diF/dt=-2700A/μs (Tvj=150), Tvj=25 | 460 | A |
| Reverse Recovery Current | Irr | IF=600A, VR=600V, VGE=-15V, diF/dt=-2700A/μs (Tvj=150), Tvj=125 | 450 | A |
| Reverse Recovery Current | Irr | IF=600A, VR=600V, VGE=-15V, diF/dt=-2700A/μs (Tvj=150), Tvj=150 | 445 | A |
| Reverse Recovery Charge | Qrr | Tvj=25 | 50 | μC |
| Reverse Recovery Charge | Qrr | Tvj=125 | 95 | μC |
| Reverse Recovery Charge | Qrr | Tvj=150 | 105 | μC |
| Reverse Recovery Energy Loss | Erec | Tvj=25 | 12 | mJ |
| Reverse Recovery Energy Loss | Erec | Tvj=125 | 25 | mJ |
| Reverse Recovery Energy Loss | Erec | Tvj=150 | 30 | mJ |
| NTC-Thermistor | ||||
| Rated resistance | R25 | Tc=25 | 5.00 | KΩ |
| Power dissipation | P25 | 10 | mW | |
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298,15K))] | 3375 | K |
| Package Properties | ||||
| IGBT Thermal Resistance: Junction to Case | Rth(J-C) | per IGBT | 0.038 | K/W |
| Diode Thermal Resistance: Junction to Case | Rth(J-C) | per Diode | 0.063 | K/W |
| IGBT Thermal Resistance: Case to Heatsink | Rth(C-H) | per IGBT, λgrease=1W/(m•K) | 0.029 | K/W |
| Diode Thermal Resistance: Case to Heatsink | Rth(C-H) | per Diode, λgrease=1W/(m•K) | 0.048 | K/W |
| Isolation Voltage | Visol | RMS, f=50Hz, t=60s | 3.4 | V |
| Creepage Distance | dcr | Terminal to Heatsink | 14 | mm |
| Creepage Distance | dcr | Terminal to Terminal | 13.5 | mm |
| Clearance Distance | dcl | Terminal to Heatsink | 12.5 | mm |
| Clearance Distance | dcl | Terminal to Terminal | 10 | mm |
| Comparative Tracking Index | CTI | >200 | ||
| Module Stray Inductance | Ls | CE per Switch | 20 | nH |
| Module lead Resistance | RCC`+EE` | Terminal to Chip per Switch, TC=25 | 1.1 | mΩ |
| Mounting Torques | M | Baseplate to Heatsink, M5 | 3 - 6 | Nm |
| Mounting Torques | M | Power Terminal, M6 | 3 - 6 | Nm |
| Module Weight | G | 350 | g | |
2411121056_JSCJ-MCF600N120S2E3_C22392038.pdf
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