High Voltage NPN Transistor JSMSEMI MMBTA42 Featuring SOT23 Package and Complementary MMBTA92
Key Attributes
Model Number:
MMBTA42
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
50MHz
Type:
-
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
200V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTA42
Package:
SOT-23
Product Description
Product Overview
The MMBTA42 is an NPN Silicon High Voltage Transistor designed for high voltage switching and amplifier applications. It offers complementary PNP types with the MMBTA92.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package: SOT-23 Plastic Package
- Complementary Type: MMBTA92 (PNP)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector Base Voltage | VCBO | 200 | V | |
| Collector Emitter Voltage | VCEO | 200 | V | |
| Emitter Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 500 | mA | |
| Power Dissipation | Ptot | 350 | mW | Ta = 25 OC |
| Thermal Resistance Junction to Ambient | RJA | 357 | OC/W | |
| Junction and Storage Temperature Range | Tj, Tstg | -55 to +150 | OC | |
| DC Current Gain | hFE | 25 | - | VCE = 10 V, IC = 1 mA |
| DC Current Gain | hFE | 40 | - | VCE = 10 V, IC = 10 mA |
| DC Current Gain | hFE | 40 | - | VCE = 10 V, IC = 30 mA |
| Collector Base Cutoff Current | ICBO | 0.1 | A | VCB = 160 V |
| Emitter Base Cutoff Current | IEBO | 0.1 | A | VEB = 6 V |
| Collector Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC = 20 mA, IB = 2 mA |
| Base Emitter Saturation Voltage | VBE(sat) | 0.9 | V | IC = 20 mA, IB = 2 mA |
| Gain Bandwidth Product | fT | 50 | MHz | VCE = 20 V, IC = 10 mA, f = 100 MHz |
| Collector Output Capacitance | Cob | 4 | pF | VCB = 20 V, f = 1 MHz |
2308071512_JSMSEMI-MMBTA42_C916394.pdf
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