N Channel 30 Volt MOSFET JSCJ CJ2306 for Load Switching in Portable Electronics and DC DC Converters
Key Attributes
Model Number:
CJ2306
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
305pF
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
4.5nC@5V
Mfr. Part #:
CJ2306
Package:
SOT-23
Product Description
Product Overview
The CJ2306 is an N-Channel 30-V (D-S) MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for load switching in portable devices and DC/DC converters. It features a TrenchFET Power MOSFET architecture for enhanced performance.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Marking: S6
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TJ=150) | ID | 3.16 | A | |||
| Pulsed Drain Current | IDM | 20 | A | |||
| Continuous Source Current(Diode Conduction) | IS | 0.62 | A | |||
| Maximum Power Dissipation | PD | 0.75 | W | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | |||
| Thermal Resistance from Junction to Ambient (t≤5s) | RθJA | 100 | /W | |||
| Drain-Source Breakdown Voltage | V(BR)DS | VGS = 0V, ID =250µA | 30 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 3.0 | V | |
| Gate-Body Leakage | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V, VGS =0V | 0.5 | µA | ||
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =3.5A | 0.038 | 0.047 | Ω | |
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =2.8A | 0.052 | 0.065 | Ω | |
| Forward Transconductance | gfs | VDS =4.5V, ID =2.5A | 7.0 | S | ||
| Diode Forward Voltage | VSD | IS=1.25A,VGS=0V | 0.8 | 1.2 | V | |
| Gate Charge | Qg | VDS =15V,VGS =5V,ID =2.5A | 3.0 | 4.5 | nC | |
| Total Gate Charge | Qgt | VDS =15V,VGS =10V,ID =2.5A | 6 | 9 | nC | |
| Gate-Source Charge | Qgs | VDS =15V,VGS =10V,ID =2.5A | 1.6 | nC | ||
| Gate-Drain Charge | Qgd | VDS =15V,VGS =10V,ID =2.5A | 0.6 | nC | ||
| Gate Resistance | Rg | f =1.0MHz | 2.5 | 7.5 | Ω | |
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 305 | pF | ||
| Output Capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 65 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 29 | pF | ||
| Turn-On Delay Time | td(on) | VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω | 7 | 11 | ns | |
| Rise Time | tr | VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω | 12 | 18 | ns | |
| Turn-Off Delay Time | td(off) | VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω | 14 | 25 | ns | |
| Fall Time | tf | VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω | 6 | 10 | ns |
2410121331_JSCJ-CJ2306_C12390.pdf
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