High Stability P Channel Power MOSFET JSCJ CJAC50P03 with Low Gate Charge and Avalanche Voltage
Key Attributes
Model Number:
CJAC50P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
4.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
665pF
Number:
1 P-Channel
Input Capacitance(Ciss):
3.59nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
84nC
Mfr. Part #:
CJAC50P03
Package:
PDFNWB-8L-EP(5x6)
Product Description
CJAC50P03 P-Channel Power MOSFET
The CJAC50P03 is a P-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide range of applications, offering high density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for heat dissipation, and special process technology for high ESD capability. It is ideal for battery and loading switching applications.
Product Attributes
- Brand: CJAC
- Part Number: CJAC50P03
- Type: P-Channel Power MOSFET
- Package: PDFNWB5x6-8L
- Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-30V, VGS =0V | -1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.5 | -2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-10A | 7 | m | ||
| Forward transconductance | gFS | VDS =-10V, ID =-15A | 20 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 3590 | pF | ||
| Output capacitance | Coss | 695 | ||||
| Reverse transfer capacitance | Crss | 665 | ||||
| Switching Characteristics (note 2) | ||||||
| Total gate charge | Qg | VDS=-15V, VGS=-10V, ID=-10A | 84 | nC | ||
| Gate-source charge | Qgs | 11.7 | ||||
| Gate-drain charge | Qgd | 25 | ||||
| Turn-on delay time | td(on) | VDD=-15V,ID=-10A, VGS=-10V,RG=6 | 13 | ns | ||
| Turn-on rise time | tr | 12 | ||||
| Turn-off delay time | td(off) | 50 | ||||
| Turn-off fall time | tf | 14 | ||||
| Drain-Source Diode Characteristics (note1) | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-10A | -0.85 | -1.2 | V | |
| Continuous drain-source diode forward current | IS | -50 | A | |||
| Pulsed drain-source diode forward current | ISM | -70 | A | |||
| Reverse Recovery Time | trr | TJ=25 ,IF=-10A, di/dt=100A/s(Note1) | 45 | ns | ||
| Reverse Recovery Charge | Qrr | TJ=25 ,IF=-10A, di/dt=100A/s(Note1) | 43 | nC | ||
Maximum Ratings
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID (1) | -50 | A |
| Pulsed Drain Current | IDM | A | |
| Single Pulsed Avalanche Energy | EAS (2) | 300 | mJ |
| Power Dissipation | PD | 2 | W |
| Thermal Resistance from Junction to Ambient | RJA (1) | 62.5 | /W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature Range | Tstg | -55 ~+150 | |
| Lead Temperature for Soldering Purposes(1/8 from case for 10s) | TL | 260 |
2410121317_JSCJ-CJAC50P03_C504092.pdf
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