High reliability N Channel MOSFET JSCJ CJAE28SN06 with excellent avalanche current and voltage ratings
Key Attributes
Model Number:
CJAE28SN06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
9.9pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
1.083nF@30V
Gate Charge(Qg):
21.4nC@10V
Mfr. Part #:
CJAE28SN06
Package:
DFNWB-8L(3x3)
Product Description
Product Overview
The CJAE28SN06 is an N-Channel Power MOSFET utilizing SGT technology and design, offering excellent RDS(ON) with low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The package provides good heat dissipation, making it suitable for a wide variety of applications including battery and loading switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAE28SN06
- Package: DFNWB3x3-8L
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Condition |
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 28 | A | Ta=25 |
| Pulsed Drain Current | IDM | 112 | A | |
| Single Pulsed Avalanche Energy | EAS | 90 | mJ | |
| Power Dissipation | PD | 83.3 | W | Tc=25 |
| Thermal Resistance Junction to Ambient | RθJA | 32 | /W | |
| Thermal Resistance Junction to Case | RθJC | 3.9 | /W | |
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55~+150 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID =250µA |
| Zero gate voltage drain current | IDSS | 1.0 | µA | VDS =48V, VGS =0V, TJ =25 |
| Zero gate voltage drain current | IDSS | 100 | µA | VDS =48V, VGS =0V, TJ =125 |
| Gate-body leakage current | IGSS | ±100 | nA | VDS =0V, VGS =±20V |
| Gate-threshold voltage | VGS(th) | 1.0 - 2.5 | V | VDS =VGS, ID =250µA |
| Static drain-source on-state resistance | RDS(on) | 11.5 | mΩ | VGS =10V, ID =20A |
| Static drain-source on-state resistance | RDS(on) | 15.0 | mΩ | VGS =4.5V, ID =10A |
| Input capacitance | Ciss | 1083 | pF | VDS =30V,VGS =0V, f =1MHz |
| Output capacitance | Coss | 302 | pF | |
| Reverse transfer capacitance | Crss | 9.9 | pF | |
| Total gate charge | Qg | 14.5 | nC | VGS=10V, VDS=30V, ID=12A |
| Gate-source charge | Qgs | 20.0 | nC | |
| Gate-drain charge | Qg | 3.6 | nC | |
| Turn-on delay time | td(on) | 21.4 | ns | VDD=30V,VGS=10V, RG=10Ω, RL=2.3Ω |
| Turn-on rise time | tr | 21.2 | ns | |
| Turn-off delay time | td(off) | 84 | ns | |
| Turn-off fall time | tf | 52 | ns | |
| Drain-source diode forward voltage | VSD | 1.3 | V | VGS =0V, IS=10A |
| Continuous drain-source diode forward current | IS | 28 | A | |
| Pulsed drain-source diode forward current | ISM | 112 | A |
2410121917_JSCJ-CJAE28SN06_C5253626.pdf
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