Load Switch and Battery Protection Device JSCJ CJQ16P03 P Channel Power MOSFET with Low Gate Leakage
Key Attributes
Model Number:
CJQ16P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
650pF
Number:
1 P-Channel
Output Capacitance(Coss):
900pF
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
5.9nF
Gate Charge(Qg):
100nC
Mfr. Part #:
CJQ16P03
Package:
SOP-8
Product Description
Product Overview
The CJQ16P03 is a P-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench MOSFET technology and a low resistance package to achieve extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: CJQ16P03
- Package: SOP8
- Material: Plastic-Encapsulate MOSFETS
- Color: Normal device (if solid dot is present, it's a Green molding compound device)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1.0 | A | ||
| TJ =125 | -100 | |||||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.65 | -2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-6A | 5.1 | 6.5 | m | |
| VGS =-4.5V, ID =-5A | 8.1 | 10 | m | |||
| Forward transconductance | gFS | VDS =-5V, ID =-14A | 10 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-24V,VGS =0V, f =1MHz | 3900 | pF | ||
| Output capacitance | Coss | 500 | ||||
| Reverse transfer capacitance | Crss | 385 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=-10V, VDS=-24V, ID=-8A | 69 | nC | ||
| Gate-source charge | Qgs | 21 | ||||
| Gate-drain charge | Qgd | 12 | ||||
| Turn-on delay time | td(on) | VDS=-15V,ID=-1A VGS=-10V,RG=3.3 | 38 | ns | ||
| Turn-on rise time | tr | 16 | ||||
| Turn-off delay time | td(off) | 245 | ||||
| Turn-off fall time | tf | 90 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-2.1A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -16 | A | |||
| Pulsed drain-source diode forward current | ISM | -64 | A | |||
2410121714_JSCJ-CJQ16P03_C2910138.pdf
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