SOP8 Package P Channel MOSFET JSCJ CJQ4953 with Low RDS ON and Green Molding Compound
Key Attributes
Model Number:
CJQ4953
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 P-Channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
CJQ4953
Package:
SOP-8
Product Description
Product Overview
The CJQ4953 is a P-Channel MOSFET designed for various applications. It features a Super High Density Cell Design for extremely low RDS(ON), offering high efficiency and performance. This device is available in an SOP8 package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: Q4953
- Package: SOP8
- Marking: Q4953
- Molding Compound: Green molding compound device (if solid dot present)
- Pin 1 Indicator: Solid dot
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (t≤10s) | ID | -5 | A | |||
| Power Dissipation (t≤10s) | PD | 1.25 | W | |||
| Thermal Resistance Junction to Ambient (t≤10s) | RθJA | 100 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS =0V, ID =-250µA | -30 | V | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1.0 | -1.5 | V | |
| Gate-body leakage | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-30V, VGS =0V | -1 | µA | ||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4.9A | 50 | 60 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-3.7A | 66 | 90 | mΩ | |
| Forward transconductance | gfs | VDS =-10V, ID =-4.9A | 6.0 | S | ||
| Diode forward voltage | VSD | IS=-1.7A,VGS=0V | -0.2 | -1.2 | V | |
| Total gate charge | Qg | VDS =-15V,VGS =-10V,ID =-4.9A | 25 | nC | ||
| Gate-source charge | Qgs | VDS =-15V,VGS =-10V,ID =-4.9A | 4 | nC | ||
| Gate-drain charge | Qg | VDS =-15V,VGS =-10V,ID =-4.9A | 2 | nC | ||
| Turn-on delay time | td(on) | VDD=-15V,RL=15Ω, ID ≈-1A, VGEN=-10V,RG=6Ω | 15 | nS | ||
| Rise time | tr | VDD=-15V,RL=15Ω, ID ≈-1A, VGEN=-10V,RG=6Ω | 20 | nS | ||
| Turn-off delay time | td(off) | VDD=-15V,RL=15Ω, ID ≈-1A, VGEN=-10V,RG=6Ω | 80 | nS | ||
| Fall time | tf | VDD=-15V,RL=15Ω, ID ≈-1A, VGEN=-10V,RG=6Ω | 40 | nS |
2410121655_JSCJ-CJQ4953_C504168.pdf
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